Allicdata Part #: | 785-1251-5-ND |
Manufacturer Part#: |
AOT20S60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 20A TO220 |
More Detail: | N-Channel 600V 20A (Tc) 266W (Tc) Through Hole TO-... |
DataSheet: | AOT20S60L Datasheet/PDF |
Quantity: | 3502 |
Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 266W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1038pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19.8nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 199 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOT20S60L Application Field and Working Principle
AOT20S60L is a type of single-level insulated gate field-effect transistor (insulated gate field-effect transistor) developed and manufactured by Alpha and Omega Semiconductor (AOS). This type of field effect transistor occupies a surprisingly small amount of space and can be used for very small components. It is an advanced power management device used for various applications, including switching and amplification, in a wide range of application fields.
Application fields
AOT20S60L is first used to replace multiple MOSFETs with a single component, which significantly reduces the package size and results in a more compact, low-profile device. This type of single transistor can also provide more power than a MOSFET and is therefore often used in motor drive applications, DC-DC converters, boost converters, switch-capacitor converters, power converters and power distribution circuits.
It can also be used in lighting and LCD backlight dimming applications. This transistor is capable of power switching with an adjustable diode in the linear region of operation. In addition, it can also be used in the industrial, automotive, computer and communications applications.
Working principle
The term field-effect transistor (FET) is sometimes used for insulation gate field-effect transistors. This type of transistor works similarly to a switch. It can be used to control current in the circuit. It is used in linear applications, such as amplifiers and converters, as well as switches, because if it is well designed, it can operate with very low power.
In contrast to bipolar transistors, insulated gate field-effect transistors also have an insulator between the source and drain regions. The insulated gate field-effect transistors have a metal oxide insulator that can vary the current in the channel. The insulated gate field-effect transistors are normally polarized and its higher forces limit the conduction of the current. The insulated gate field-effect transistors can be divided into two types, n-channel insulated gate field-effect transistors and p-channel insulated gate field-effect transistors.
AOT20S60L is a high-reliability enhancement mode FET. The gate is insulated from the drain and source by a silicon oxide layer. The voltage applied between the gate and the source affects the current flowing through between the drain and source terminals. When the gate voltage is higher than the threshold, the drain-source current increases, while when the gate voltage is lower than the threshold voltage, the drain-source current decreases.
Conclusion
AOT20S60L is the latest development in insulated gate field-effect transistors by Alpha and Omega Semiconductor. It is one of the smallest components available and has a wide range of applications, including power switching and amplification. This type of transistor works similar to a switch, where the gate voltage is used to control the current in the circuit. It is used in various applications due to its low power consumption and small size.
The specific data is subject to PDF, and the above content is for reference
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