Allicdata Part #: | 785-1711-5-ND |
Manufacturer Part#: |
AOT20C60PL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 600V 20A (Tc) 463W (Tc) Through Hole TO-... |
DataSheet: | AOT20C60PL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 463W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3607pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOT20C60PL is a N-Channel enhancement-mode MOSFET transistor with a low threshold voltage and high load current capabilities. This transistor is compatible with a wide range of voltage levels, temperature, and frequency range and can be used in a variety of applications. It is designed to operate over a wide temperature range and is suitable for use in applications where reliability and quality are needed.
The AOT20C60PL is a power MOSFET that can be used for a variety of applications, from high frequency switching, power amplifiers, DC converters, and motor control. The transistor features low on-resistance and a low gate-source threshold voltage, making it ideal for switch mode power applications. Its high linearity ensures good signal fidelity, and its low gate-source capacitance makes it ideal for high frequency applications.
The internal structure of the AOT20C60PL consists of a silicon dielectric insulated-gate field-effect transistor (IGFET) with an N-Channel. The N-Channel design allows the device to be turned on (enhancement mode) when a positive voltage is applied between the gate and the source. When a negative voltage is applied, the device becomes cut-off due to the reverse resistance of the channel. The MOSFETs characteristics are determined by the ratio between the channel resistance and the transconductance. This ratio is referred to as the transconductance-to-resistance ratio or "gm/rDS(on)." The values of gm/rDS(on) of the AOT20C60PL are 3.2 and 5.2, respectively.
The AOT20C60PL can be used for a range of applications, such as switch mode power supplies, DC converters, motor controllers, and other power electronics applications. Its low on-resistance and low gate-source threshold allow it to be used for high frequency switching. It is also ideal for low to medium voltage applications due to its high linearity, making it suitable for audio and RF applications. Its low gate-source capacitance makes it suitable for high frequency applications, such as cell phones or Wi-Fi devices. Its wide temperature range makes it suitable for industrial and automotive applications.
In summary, the AOT20C60PL is a N-Channel enhancement-mode MOSFET transistor with a low threshold voltage and high load current capabilities. It is designed to operate over a wide temperature range and is suitable for use in applications where reliability and quality are needed. The transistor is suitable for applications such as switch-mode power supplies, DC converters, motor controllers, audio, RF, and other high-frequency applications. Its wide temperature range makes it suitable for tough industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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