Allicdata Part #: | AOT286L-ND |
Manufacturer Part#: |
AOT286L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N CH 80V 13A TO220 |
More Detail: | N-Channel 80V 13A (Ta), 70A (Tc) 2.1W (Ta), 167W (... |
DataSheet: | AOT286L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3142pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOT286L is a Enhancement-mode enhancement (ENE). It is suitable for both commercial and automotive applications and can be found in many industries such as industrial, automotive and consumer electronics.
AOT286L is a single-gate MOSFET that can be used for onboard driving and complex interface circuits, such as analog circuits, optocouplers, LED drivers, bridge-mode control applications, and RF amplifiers.
Features
- Excellent thermal performance and stability
- Low-power switching
- Improved ESD performance
- High capacitance-drive output stage
- High operating temperature range
- High input impedance
- Pb-free package
Application
AOT286L can be used as a high-speed switch in a variety of applications. It is ideal for use in power stages with high capacitive loading, as it can provide excellent thermal performance. The device is also suitable for use in high-performance power supplies, such as synchronous DC/DC converters and active rectifiers, as it can help improve the efficiency of the supply.
The device is also suitable for RF applications, such as low-noise amplifiers and low-pass filters. It is also ideal for use as a gate drive in common-source amplifiers, high-speed logic gates, and level shifters.
Working Principle
AOT286L is an enhancement-mode MOSFET, which means that it requires a voltage to be applied to its gate to turn on the device. The basic operation of the device is that a voltage applied to the gate will draw the source-drain current through the channel. The source-drain current can be increased or decreased by changing the voltage on the gate.
The device is composed of an insulating gate dielectric between a metal gate and the substrate. The metal gate acts like a capacitor, storing charge and releasing it when the gate voltage is increased. This increases the source-drain current, which in turn increases the power of the device.
The device is designed to be extremely efficient, drawing very little current when the gate voltage is low. This combined with its high capacitance-drive output stage enables it to support high-speed switching with minimal power consumption. The device can also switch off quickly, allowing it to be used in low-power systems.
Conclusion
AOT286L is a single-gate MOSFET that is suitable for a variety of applications. It can be used in power stages with high capacitive loading, RF applications, and as a gate drive in common-source amplifiers and high-speed logic gates. It is also designed to be efficient, drawing very little current when the gate voltage is low. All these features make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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