Allicdata Part #: | 785-1430-5-ND |
Manufacturer Part#: |
AOT254L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 150V 4.2A TO220 |
More Detail: | N-Channel 150V 4.2A (Ta), 32A (Tc) 2.1W (Ta), 125W... |
DataSheet: | AOT254L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOT254L is a specialized N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for applications requiring fast switching times, low on-resistance, and low gate drive requirements. MOSFET devices are used to control high-voltage and high-current signals, and the AOT254L is one of the more popular MOSFETs on the market today. In this article, we\'ll discuss the AOT254L\'s application field and working principle.
The AOT254L is designed as a high-speed switch, capable of switching power and signals quickly and efficiently. The low resistance and low drive requirements make it ideal for applications that require quick switching times but do not need to carry high current. It is especially well suited for applications that involve high-frequency switching, such as those found in the automotive industry.
The AOT254L also has a number of features that make it attractive for use in motor control, lighting control, and other power switching applications. For example, the device has a built-in thermal shutoff feature, which prevents the MOSFET from overheating by automatically shutting off the power supply when it reaches a predetermined temperature. The device also has a gate-fuse feature, which helps protect against short circuits by automatically shutting off the power when the gate voltage reaches a predetermined level.
The AOT254L is a three-terminal device, consisting of a drain, gate and source. The drain terminal is connected to the load, while the source terminal is connected to the power supply. The gate terminal provides the control input to the MOSFET, allowing it to be turned on and off. When the gate voltage is low, the MOSFET is off and no current flows; when the gate voltage rises, the MOSFET is “on” and current begins to flow between the source and the drain. The MOSFET can only be turned off and on manually; it cannot be turned on and off remotely, like a transistor.
The AOT254L also features a built-in diode to protect the device from reverse polarity and an ESD protection diode to protect it from electrostatic discharge. With a wide range of operating temperatures, it can be used in environments ranging from -55°C to +175°C, making it suitable for a variety of applications.
In addition to providing fast switching times and low current drive requirements, the AOT254L also offers high transconductance and a low output capacitance. This allows it to respond quickly to input signals, while still providing reliable performance in a variety of power switching applications. The AOT254L is a popular choice for signal processing, and its low output capacitance makes it an ideal choice for applications that require signal integrity.
The AOT254L is a versatile and reliable device, with a wide range of applications in the power and signal processing industries. Its low drive requirements and fast response time make it ideal for use in switching applications, motor control, lighting, and other power switching applications. Its wide temperature range and built-in diode protection make it suitable for use in a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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