Allicdata Part #: | AOT282L-ND |
Manufacturer Part#: |
AOT282L |
Price: | $ 1.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 80V 18.5A TO220 |
More Detail: | N-Channel 80V 18.5A (Ta), 105A (Tc) 2.1W (Ta), 272... |
DataSheet: | AOT282L Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.34522 |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7765pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 2.1W (Ta), 272.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Ta), 105A (Tc) |
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The AOT282L is a logic level enhancement mode Field Effect Transistor (FET) that has been designed for use as an electronic switch. It is a single Power-on Reset (POR), N-channel MOSFET with a threshold voltage of 3.2V. The AOT282L is constructed using advanced Power Metal-Oxide Semiconductor (PMOS) technology and is designed to provide a low on-resistance, in order to minimize power loss when the FET is switched on.
The AOT282L is suitable for use in applications that require fast switching times, high performance, and low power consumption. This FET is well-suited for use in switching, power control, and power supply circuits. The FET can be used for driving high-current loads, such as power MOSFETs, and for providing protection against overcurrent conditions.
The AOT282L has a logic level enhancement mode which allows the FET to be switched on at a lower gate voltage than is required for other FETs. This feature allows the device to be used with standard logic systems, and makes it suitable for use in low-voltage, low-power applications.
The AOT282L is constructed using a single polycrystalline silicon gate structure and is rated for operation at temperatures up to 175°C. The FET is designed with a voltage-limited input that is suitable for operation with standard digital logic circuits. The input voltage can be varied between 0.8V and 4.5V. The maximum drain source voltage rating is 30V, while the channel maximum voltage is 40V.
The AOT282L employs working principle such as body diode, channel protection, avalanche protection and electrostatic discharge protection to further enhance its performance and secure the FET from overheating. The body diode rectifies current flow through the transistor when forward biased which helps the FET to provide maximum efficiency.
The channel protection keeps the FET secure against overloads and current surges. The avalanche protection prevents the FET from damage when an electric spark occurs between the source and drain electrodes. The electrostatic discharge protection ensures that the FET can withstand a high level of electrostatic charge without damage.
The AOT282L is widely used to control voltage and current in various systems including switching power supplies, LED drivers, motors, starter circuit controls, battery chargers, mobile phones and other consumer devices. The FET is also well-suited for applications that require a low on-state resistance, such as DC-DC converters, automotive switches, and low-voltage switching applications.
The AOT282L is a versatile device and is suitable for use in a variety of applications. The FET provides excellent performance and reliability in applications that require low gate voltage, fast switching times, and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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