AOT27S60L Allicdata Electronics
Allicdata Part #:

785-1252-5-ND

Manufacturer Part#:

AOT27S60L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 27A TO220
More Detail: N-Channel 600V 27A (Tc) 357W (Tc) Through Hole TO-...
DataSheet: AOT27S60L datasheetAOT27S60L Datasheet/PDF
Quantity: 3993
Stock 3993Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 357W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1294pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: aMOS™
Rds On (Max) @ Id, Vgs: 160 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOT27S60L, manufactured by Alpha and Omega Semiconductor, is a P-channel TrenchMOS(TM) Low-Voltage enhancement-mode power MOSFET. It has a maximum drain to source voltage (VDS) rating of 30V, making it suitable for various load switching applications such as in industrial, telecoms and computer power supplies. This MOSFET is designed with a N-channel enhancement-mode silicon gate and comes in the TO-252 (DPAK) package. This type of MOSFET can be used in devices with low current consumption, as it helps to reduce the amount of power used.

In normal operation, the AOT27S60L will be used as a switch to control the flow of current through a circuit continuously based on its input. For this application, the device is connected in series with a current-limiting resistor and the input signal applied to the gate. When the input voltage is 0V, the AOT27S60L is in the turned-off state (OFF) and the current in the load is zero. When the voltage is above the turn-on threshold voltage, the MOSFET is in the turned-on state (ON) and the full load current will flow through the switch. This type of MOSFET also has a fast switching speed, allowing it to switch quickly between the two states.

One of the main advantages of using the AOT27S60L is its low on-state resistance, which is in the range of about 2 Ohms. This low resistance enables efficient switching and reduces the amount of power required to drive the MOSFET. Additionally, because it is a P-channel MOSFET, the AOT27S60L is inherently level-shifted, meaning that it can be driven by low voltage signals. This makes it suitable for applications in which the logic signal needs to be converted to a higher voltage.

Another advantage of the AOT27S60L is its maximum drain to source voltage (VDS) rating of 30V. This means that it can be used with higher voltage loads than standard P-channel MOSFETs, making it suitable for a variety of applications. In addition, it has a lower maximum current rating than some other P-channel MOSFETs, making it more suitable for low-current applications.

AOI27S60Ls are commonly used in a wide range of electronic devices, from switching power supplies to audio and video systems. It is a high quality device with low on-state resistance, and its low turn-on voltage makes it suitable for low-voltage applications. By using this device, designers can reduce power consumption and offer enhanced control of current and voltage. As a result, it is an important component in a variety of applications, offering improved efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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