Allicdata Part #: | 785-1274-5-ND |
Manufacturer Part#: |
AOT2918L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 90A TO220 |
More Detail: | N-Channel 100V 13A (Ta), 90A (Tc) 2.1W (Ta), 267W ... |
DataSheet: | AOT2918L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 267W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3430pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 90A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOT2918L is a logic-level enhancement-mode power field-effect transistor (FET). The transistor is fabricated using an advanced high-cell density DMOS process that provides superior switching performance and fast switching speed coupled with low on-resistance. This device is designed for high-side switching applications.
AOT2918L is designed to operate with a wide power supply range of 3.0V to 18V. Its maximum on-resistance (RON) is only 30mΩ, which is significantly lower than other enhancement-mode MOSFETs. This low RON makes it suitable for use in high power devices such as DC-DC converters and buck converters.
This device is designed with a gate-source depletion (GSD) structure, where the gate is forward-biased to the source by the use of a field oxide. This oxide creates a depletion region in the surface of the drain layer, which acts as a high-frequency switching barrier. This structure gives the AOT2918L superior switching characteristics, with a fast and smooth turn-on and a fast and soft turn-off. It also has a low gate charge, making it an ideal choice for high-frequency switching applications.
The AOT2918L features a logic-level gate threshold voltage. This voltage is approximately 0.8V, so the gate can be driven by a logic-level signal for low power switching applications. The device also features a low drain-source on-resistance of 30mΩ, which makes it suitable for power switching applications up to 18W with a drain-source voltage of less than 18V. The low RON also allows for maximum power efficiency.
In addition to its switching characteristics, the AOT2918L also has built-in ESD protection. It is designed to protect the device from electrostatic discharge, which can damage the device if not properly protected. Its maximum ESD rating is up to 2kV in the Human Body Model (HBM). This ESD protection ensures that the device is able to withstand harsh environmental conditions.
In summary, the AOT2918L is a logic-level enhancement-mode power FET that is designed for high-side switching applications. It features a low on-resistance of 30mΩ, a fast switching speed and a low gate charge. It is also designed with a built-in ESD protection, making it suitable for applications with harsh environmental conditions. Its low threshold voltage makes it suitable for logic-level switching applications, and its low drain-source on-resistance makes it suitable for use in high power applications.
The specific data is subject to PDF, and the above content is for reference
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