APT24M80B Allicdata Electronics
Allicdata Part #:

APT24M80B-ND

Manufacturer Part#:

APT24M80B

Price: $ 7.66
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 800V 25A TO-247
More Detail: N-Channel 800V 25A (Tc) 625W (Tc) Through Hole TO-...
DataSheet: APT24M80B datasheetAPT24M80B Datasheet/PDF
Quantity: 1000
60 +: $ 6.89031
Stock 1000Can Ship Immediately
$ 7.66
Specifications
Series: POWER MOS 8™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4595pF @ 25V
FET Feature: --
Power Dissipation (Max): 625W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Description

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MOSFETs (Metal Oxide Semiconductor Field-effect Transistors) are an integral component of modern circuit designs, used for voltage regulation and switching. The APT24M80B is a typical single MOSFET device that offers low level output power distribution, efficient power dissipation and protection for sensitive circuitry. With its flexible configuration and low on-resistance, the APT24M80B is ideal for consumer and industrial electronics applications.

The APT24M80B is constructed using an N-channel metal-oxide semiconductor (NMOS) structure, where an insulated-gate field-effect transistor is formed by the sandwiching of an NMOS layer between two metal source and drain electrodes. The insulated-gate has a single control terminal, the Gate, which opens and closes a channel by acting as a diode-like capacitor. By applying a voltage to the control terminal, the channel can be switched on and off, allowing current to flow between the source and drain. When the channel is open, current can freely flow between the source and drain. When the channel is closed, current cannot flow.

The APT24M80B is a versatile MOSFET, with a variety of features and applications. Its low on-resistance and high speed switching make it an ideal choice for high-current handling applications such as motor control and power supply regulation. It is also suitable for switching of consumer and industrial electronics, as its low operating voltage makes it compatible with low-voltage power supply designs. Additionally, the device features active prevent voltage clamping, which helps protect circuitry from overvoltage and overcurrent conditions. The APT24M80B also supports active current balancing, providing improved transient performance.

The APT24M80B is a part of a class of single MOSFET devices commonly used in digital logic circuits, DC motor drivers, audio amplifiers, home appliances, soft starters and power supplies. Its versatility makes it suitable for a wide variety of applications, such as circuit protection, overvoltage protection, and motor control. For instance, the APT24M80B’s low on-resistance makes it ideal for use in DC motor applications, where a large voltage drop across the MOSFET device is unacceptable. Furthermore, its low operating voltage means it can be used in a variety of power supplies, from single-ended to positive multi-voltage designs.

Overall, the APT24M80B is a powerful, highly configurable MOSFET device, which can be used for a variety of applications. Its unique features, such as active prevent voltage clamping and active current balancing, make it well suited for a wide range of DC motor applications and power supply designs.

The specific data is subject to PDF, and the above content is for reference

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