Allicdata Part #: | APT35SM70S-ND |
Manufacturer Part#: |
APT35SM70S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 700V D3PAK |
More Detail: | 700V 35A Through Hole TO-247 |
DataSheet: | APT35SM70S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Rds On (Max) @ Id, Vgs: | -- |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | -- |
Vgs(th) (Max) @ Id: | -- |
Series: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Current - Continuous Drain (Id) @ 25°C: | 35A |
Drain to Source Voltage (Vdss): | 700V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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APT35SM70S is a type of Field Effect Transistor (FET) commonly utilized in power circuits. It is part of a family of FETs known as “Enhancement-mode MOSFETs” and is most often used in electronic devices that are powered by AC or DC sources. The APT35SM70S single FET is designed to provide reliable performance and regulation in a variety of applications.
The APT35SM70S is constructed of a high-voltage semiconductor material and is encapsulated in an insulated package. This provides superior thermal and electrical insulation, making it well suited for use in environments where temperature and shock/vibration stress levels may be high. Additionally, the device includes protection circuitry to prevent damage from accidental static discharges.
The APT35SM70S can be used in a variety of switching and control applications, including those relating to industrial, automotive, and telecom equipment. Its small size and low power consumption make it well-suited for use in high-density applications, such as mobile phones and computers. The device can also be used in non-power circuits, such as signal processing circuitry and display controllers.
The working principle of the APT35SM70S is based on using a strongly conducting channel between its source and drain terminals. This channel is created by a flow of electrons through a gate terminal, which is called the “gate voltage”. When the gate voltage is “on”, the channel is created and current flows between the source and the drain, thus controlling the current flow. The gate and drain terminals of the APT35SM70S can be controlled either manually or through an external voltage, depending on the application.
The APT35SM70S is noted for its highgate-source breakdown voltage. This indicates that the device can safely support a relatively high amount of voltage between the two terminals. This makes it ideal for working in high-voltage applications, such as automotive engines and other AC/DC power circuits. The device also offers high thermal and electrical performance, making it suitable for use in high-temperature and vibration-prone environments.
The APT35SM70S is an efficient and reliable FET device well suited to a variety of power and non-power switching applications. It provides excellent thermal and electrical insulation, combined with strong gate-source breakdown voltage, making it a great choice for high-voltage, high-temperature and vibration-prone environments. It is available in a range of packages, making it suitable for use in a wide variety of applications, including mobile phones, computers, and automotive and industrial control systems.
The specific data is subject to PDF, and the above content is for reference
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