APT38N60SC6

Vgs(th) (Max) @ Id:	3.5V @ 1.2mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D3Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	278W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2826pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	112nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	99 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	38A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

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Introduction

APT38N60SC6 is a 60V N-channel enhancement mode MOSFET (metal-oxide-semiconductor field effect transistor). This is a vertical DMOS power FET that is designed using the advanced fully-depressed trench process. It is a simple device with a gate, drain, and source with many useful applications in power electronics and other such fields.

Application Field and Working Principle

The APT38N60SC6 can be used in a multitude of applications because of its high electrical performance. It can be used in motor control and switching, display power control, and power supplies. In addition, it can also be used in automotive, commercial, and industrial applications.The APT38N60SC6 has a very efficient working principle and can handle high currents with very low switching losses. The device works by having a drain connected to the anode of the device, while the source is connected to the cathode. A gate is then connected to the source, allowing the device to be switched on and off by applying a voltage to the gate.When the gate voltage is low, no current can flow between the source and the drain. At the same time, the channel between the source and drain is pinched off. As the voltage of the gate is increased, the channel will open further, allowing the current to flow between the source and the drain, which is then known as an “on” state. The APT38N60SC6 can handle a maximum voltage of 60V and a continuous basic load current of 38A.

Advantages

The APT38N60SC6 has many advantages compared to other MOSFETs. It offers superior on-state resistance, high efficiency and fast switching performance. It also has excellent short-circuit and thermal protection with a maximum operating temperature of 150°C. The device has a low gate capacitance, allowing for higher switching frequencies. Finally, it has a wide load current range from 0-38A up to a drain-source voltage of 60V. These features make the APT38N60SC6 an ideal choice for applications that require high efficiency, performance, and reliability.

Conclusion

The APT38N60SC6 is a 60V N-channel enhancement mode MOSFET designed using a fully-depressed trench process. It offers a wide variety of applications, including motor control and switching, display power control, and power supplies. It has many advantages over other MOSFETs, such as superior on-state resistance, high efficiency, and fast switching performance. This makes the device an ideal choice for applications where high efficiency, performance, and reliability are needed.

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