Allicdata Part #: | APT5020BN-ND |
Manufacturer Part#: |
APT5020BN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 28A TO247AD |
More Detail: | N-Channel 500V 28A (Tc) 360W (Tc) Through Hole TO-... |
DataSheet: | APT5020BN Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | POWER MOS IV® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Transistors are widely used components in computing, communication and entertainment applications such as mobile phones, handheld computers, laptop computers, and gaming systems. They can serve as switches or amplifiers and can offer unique features, such as high gain, low voltage requirements, and immunity to noise. One type of transistor is the Field Effect Transistor, or FET. A FET is a three-terminal device and is divided into two subtypes—MOSFETs and JFETS. The APT5020BN is an N-channel enhancement mode MOSFET, which is used for a variety of applications.The APT5020BN is a 100V, 0.020 Ohm, 20A power MOSFET, with an Rds(on) of 80mΩ (max). It is offered in a standard SOIC package and is suitable for use in a wide range of applications, such as switching and power supply circuits, as well as motor and lighting control. It has an ESD rating of 8kV HBM, and its maximum junction temperature is 175°C.The APT5020BN has a low gate to source charge of 15nC and a very low gate resistance of 30 milliohms. It also features very low on-state resistance, making it ideal for high power applications. The gate threshold voltage is -0.7V, and the gate source cut-off voltage is -2.0V.The working principle of the APT5020BN is based on the MOSFET construction. A MOSFET is a three-terminal device consisting of a source (S), a drain (D), and a gate (G). This configuration is also known as an enhancement-mode MOSFET, because it operates in reverse-bias, meaning that the drain-source voltage (VDS) must be greater than the gate-source voltage (VGS) in order for the device to be switched on.The APT5020BN is controlled by an external voltage applied to the gate which sets up the gate-source voltage. When a positive voltage is applied to the MOSFET\'s gate (VGS > Vth), a channel is induced in the substrate, connecting the drain and the source. This forms a conducting path between the drain and the source, allowing current to flow through the device.The APT5020BN is suitable for a variety of applications. It can be used in switching applications to control the flow of current in circuits, as well as in motor and lighting controller applications. It can also be used in power management and other high power applications. It is stable and reliable and is capable of handling high currents for a long period of time without any adverse effects on its performance.In conclusion, the APT5020BN is an N-channel enhancement mode MOSFET with low gate charge and low gate resistance. It is suitable for a wide range of applications, such as switching, power management, and motor and lighting control. It operates in reverse bias, with a VGS greater than the threshold voltage (VTH). It is stable and reliable, capable of handling high currents for extended periods of time.
The specific data is subject to PDF, and the above content is for reference
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