Name: APT5022BNG
Brand: Microsemi Corporation
SKU: APT5022BNG-ND
Availability: InStock

Allicdata Part #:	APT5022BNG-ND
Manufacturer Part#:	APT5022BNG
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	Microsemi Corporation
Short Description:	MOSFET N-CH 500V 27A TO247AD
More Detail:	N-Channel 500V 27A (Tc) 360W (Tc) Through Hole TO-...
DataSheet:	APT5022BNG Datasheet/PDF
Quantity:	1000

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Specifications

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	210nC @ 10V
Series:	POWER MOS IV®
Rds On (Max) @ Id, Vgs:	220 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	27A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Description

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The APT5022BNG is a lateral N-channel enhancement mode column insulated gate field effect transistor (IGFET). It is designed for high performance switching applications, and it uses a vertical power device cell structure with self-aligned gate and implanted source/drain technology to provide excellent low-on resistance and fast switching performance. This makes it a great choice when high performance and reliability are needed.This field effect transistor (FET) is often used in a variety of applications such as power switching, amplifier and analog switches, pulse current controls, low-noise voltage comparators, analog linear biasing, and active loads. In addition, it can be used in a variety of load configurations and drive conditions, such as low-supply with high load current, high-side switching, and low leakage currents.The APT5022BNG has an avalanche energy-sensing mechanism that prevents avalanche operation. This feature helps to reduce power consumption and increase efficiency in high power applications. The gate is designed to provide protection against ESD events, and it comes with reverse ESD protection diodes as well. The drain of the FET also features a temperature sensing mechanism that helps protect the device from thermal overload.When operating the APT5022BNG, the gate voltage must be programmed using an external control signal. The drain drain current is a function of the gate voltage, and the desired drain current can be programmed using an external current-sensing resistor. The FET is designed to provide a consistent drain current over certain gate voltage range.In addition, the APT5022BNG features a rectangular voltage waveform input for providing a pulsed gate voltage as needed for certain applications. The onset of saturation is also adjustable, helping to reduce power dissipation and prevent overheating in circuits.The APT5022BNG is a versatile and power efficient FET, making it suitable for a wide variety of applications. It has an impressive ON resistance and fast switching speed, and its ability to sense and monitor its own power dissipation helps to ensure a reliable operation even under high current condition or fault conditions. Its ESD protection feature also helps to provide an extra layer of protection, making it a great choice when reliability is needed.

The specific data is subject to PDF, and the above content is for reference

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APT5022BNG-ND

APT5022BNG

Discrete Semiconductor Products