APT70GR65B2SCD30

Series:	*
Packaging:	Bulk
Part Status:	Obsolete
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	134A
Current - Collector Pulsed (Icm):	260A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 70A
Power - Max:	595W
Gate Charge:	305nC
Td (on/off) @ 25°C:	19ns/170ns
Test Condition:	433V, 70A, 4.3 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	T-MAX™ [B2]

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The APT70GR65B2SCD30 is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by APT (Advanced Power Technologies). IGBT transistors are widely used due to their high-power efficiency and low forward voltage drop. Their features make them a suitable choice for applications where both high-frequency and high-efficiency operation is desired. This article will discuss the application field and working principle of this single IGBT.

Application Field

The APT70GR65B2SCD30 IGBT is suitable for a variety of applications, including motor control and power conversion, due to its low electricity loss and high power efficiency. Additionally, this device is excellent for applications requiring energy storage and/or high-frequency operation, such as motor drives, welding equipment and portable generators.The device offers an optimum performance in motor drive applications, since its low forward voltage drop allows for higher power efficiency and less heat generation. This also makes it suitable for other high-power applications, such as power supplies and inverters.Furthermore, its low on-state voltage drop and turn-off losses make it an excellent choice for high-speed switching. The device can also handle a relatively wide temperature range, which makes it suitable for applications in harsh environments.

Working Principle

The APT70GR65B2SCD30 utilizes a bipolar IGBT architecture in order to control the flow of electrical current. This transistor has two terminals, the gate terminal and collector-emitter terminal. When the gate terminal is forward biased, the device turns on and current can flow between the two terminals. In this state, the device has low on-state voltage drop, which allows for more efficient operation.When the gate terminal is reverse biased, the device turns off and no current can flow between the collector and emitter terminals. This mechanism ensures that the device has a low turnoff loss, leading to higher power efficiency.

Conclusion

The APT70GR65B2SCD30 is a single IGBT suitable for a wide range of applications. Its low forward voltage drop and low turn-off losses allows for higher power efficiency and lower heat generation. Additionally, its high-frequency operation makes it suitable for applications in motor control and power conversion. Finally, its low on-state voltage drop and wide temperature range makes it suitable for applications in harsh environments.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description