APT70SM70B Allicdata Electronics
Allicdata Part #:

APT70SM70B-ND

Manufacturer Part#:

APT70SM70B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: POWER MOSFET - SIC
More Detail: N-Channel 700V 65A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: APT70SM70B datasheetAPT70SM70B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Vgs (Max): +25V, -10V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V
Series: --
Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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In electronics, FETs (Field Effect Transistors) and MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are members of the semiconductor family. FETs were the first type of transistor to be invented and are used in many applications such as amplifiers, switches, and signal generators. MOSFETs are more commonly used today because they offer increased performance over FETs in circuit designs. The APT70SM70B is a single-gate MOSFET that is used in a variety of applications.

The APT70SM70B is a depletion-mode enhancement MOSFET, meaning that it will only conduct when its gate voltage becomes more negative than the voltage at its source. This is different from a normal FET, which will conduct when its gate voltage becomes positive. This type of MOSFET is often used in negative-signal applications because of its unique properties.

The APT70SM70B is a general-purpose device and can be used in a variety of applications such as input protection, battery back-up, audio preamplifier, voltage level shifters, and power switches. It is also used in applications such as a high-gain amplifier, logic-level translation, and gate drive circuits. The APT70SM70B’s extremely fast switching time makes it suitable for a wide range of switching applications.

The device has several features that make it an ideal choice for a wide range of applications. It is extremely low in profile, which means that it will not obstruct other components in the same circuit. Its low power consumption makes it an ideal choice for battery-powered devices. It is also fast switching, which makes it an excellent choice for high-speed switchover applications. The APT70SM70B also features a high input impedance, which reduces the burden on the power supplies.

The working principle of the APT70SM70B is relatively simple. The transistor is connected with two terminals, the gate and the channel. The gate is a control terminal which is used to control the flow of current through the channel. The gate voltage determines the current flow through the channel, and when the voltage becomes more negative than the voltage at the source, the transistor will begin to conduct and allow current to pass through the channel.

As the gate voltage becomes more negative, the current flow through the channel increases and the device begins to act as an amplifier. When the voltage is increased beyond the threshold voltage, the device will become saturated, allowing only a very small current to pass through the channel. This is an important feature to consider when designing circuits that use the APT70SM70B.

The APT70SM70B is an excellent device for many applications because of its features and performance. It can be used for input protection, battery back-up, audio preamplifier, voltage level shifters, power switches, and gate drive circuits. Its fast switching time and low power consumption make it an ideal choice for a variety of switchover applications. Its extremely low profile and high input impedance reduce the burden on power supplies, making it an excellent choice for portable devices.

The specific data is subject to PDF, and the above content is for reference

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