APT77N60JC3

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APT77N60JC3 is a N-channel enhancement-mode MOSFET, which is suitable for high-power switching applications. It is designed with advanced silicon-on-insulator (SOI) technology to help enhance switching performance and power density. The device also features an integrated gate resistance of 1.51 ohms. This helps it achieve a maximum drain current of 60 Amps, and an on-state resistance of 0.51 ohms, making it ideal for a wide range of applications.

This MOSFET is applicable to a wide range of power systems. It can be used in applications such as motor control, robotics, automotive, battery management, lighting, and other power electronics systems. With its high current capabilities and low on-state resistance, it can also be used for buck and boost converters, flyback converters, and other switching power supply applications.

APT77N60JC3 is designed to operate in environments from -55 C to +150 C. It has a drain-source voltage (VDSS) of 600 V, gate-source voltage (VGSS) of +/- 20 V, and a very low threshold voltage (VGS (th)) of 4.5 V (maximal). It has a maximum breakdown voltage of 600 V with a maximum blocking voltage of 200 V.

This MOSFET is also designed to provide high speed switching, with very low resistance. Its high-speed switching capability can be used to control switching frequencies in a wide range of power applications, allowing faster signal transfer times. It also features short body diodes that help reduce switching times and improve noise immunity.

The MOSFET is also designed with a built-in gate-to-drain protection (GAP) feature, which helps prevent gate damage due to overvoltage or gate-to-drain short circuits. The GAP feature is designed to protect the MOSFET from being damaged by excessive gate currents. It also helps prevent overcurrent during turn-off transients.

In addition to its power and speed, the APT77N60JC3 is also designed to be very reliable. It has a high stability under extreme temperatures, with its thermal stability designed to ensure reliable operation. It has a maximum operating junction temperature of +150 C. The device also has a very low leakage current, reducing power loss and increasing the efficiency of the system.

In summary, the APT77N60JC3 is a highly reliable, robust, and high-speed N-channel MOSFET that can be used in a wide range of power systems. It features an integrated gate resistance of 1.51 ohms that helps it achieve a maximum drain current of 60 Amps and an on-state resistance of 0.51 ohms. It’s designed to operate in the temperature range of -55 C to +150 C, and features a maximum breakdown voltage of 600 V and a maximum blocking voltage of 200 V. With its high current capability and low on-state resistance, it is ideal for applications such as motor control, robotics, automotive, battery management, lighting, and other power electronics systems.

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