Allicdata Part #: | APT75GN120JDQ3G-ND |
Manufacturer Part#: |
APT75GN120JDQ3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 124A 379W SOT227 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 124A 37... |
DataSheet: | APT75GN120JDQ3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 124A |
Power - Max: | 379W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
Current - Collector Cutoff (Max): | 200µA |
Input Capacitance (Cies) @ Vce: | 4.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
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Transistors - IGBTs - Modules
The APT75GN120JDQ3G is a High-Voltage Insulated Gate Bipolar Transistor (IGBT) Module. This type of IGBT is capable of handling heavy electrical loads without the need for an additional temperature control circuit due to its temperature rated operating range. It is a fairly common module and can be found in numerous applications, from controlling double layer capacitors to switching high-voltage equipment.
Application Field
The APT75GN120JDQ3G is a very versatile and powerful IGBT. Its wide range of applications include motor speed control, lighting control, power command systems, control of electrical actuators, HVAC systems, data acquisition systems, and numerous other applications. This IGBT module is especially important in heavy load and at high load current applications as it is able to dissipate large amounts of power and maintain adequate performance even at high applied voltages.
Working Principle
Working principle of a IGBT module is similar to that of a power MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). Like the MOSFET, an IGBT is an enhanced transistor which is designed to switch larger currents and voltages. The main difference is that an IGBT module contains an additional layer of insulation which allows it to control higher voltages. When used as a switch, IGBT modules are able to switch both AC and DC signals, while power MOSFETs can only switch DC signals.
The APT75GN120JDQ3G IGBT module is composed of a cascode structure of two power semiconductor switches in series, or a transistor and a diode. These two switches are connected in opposite to each other so they can be controlled and turned on or off simultaneously. The module has an internal gate resistance and voltage control capabilities which allow it to handle higher voltages and currents. The insulated gate construction helps to eliminate the possibility of any electrical shorting during operation, making it much safer for use in high-voltage applications.
Conclusion
In conclusion, the APT75GN120JDQ3G IGBT module provides versatile and powerful performance for many applications. It has a wide range of working voltage and current control capabilities due to its insulated gate construction. The module is very reliable and safe, making it ideal for controlling large loads in many applications.
The specific data is subject to PDF, and the above content is for reference
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