APT75GN60LDQ3G

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	155A
Current - Collector Pulsed (Icm):	225A
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 75A
Power - Max:	536W
Switching Energy:	2500µJ (on), 2140µJ (off)
Input Type:	Standard
Gate Charge:	485nC
Td (on/off) @ 25°C:	47ns/385ns
Test Condition:	400V, 75A, 1 Ohm, 15V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264 [L]

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Introduction

APT75GN60LDQ3G are insulated gate bipolar transistors (IGBTs) for use in low-voltage and medium-power switching applications. These IGBTs provide excellent efficiency up to 80 percent, with low power losses and reliable operation, making them suitable for motor control, lighting control, home appliance, and automotive applications. In this article, we will explore the different application fields and working principles of APT75GN60LDQ3G.

Application Fields

APT75GN60LDQ3G are most commonly used in motor control, lighting control, home appliances, and automotive applications. Motor control has traditionally been done by varying the applied voltage. However, variable speed drive techniques composed of Power Electronics components are becoming increasingly popular. IGBTs are used in Variable Frequency Drives (VFDs) for this purpose, as they provide high efficiency and reliability that make them suitable for these demanding applications.In addition to motor control, IGBTs can also be used in lighting control applications. This is beneficial as the IGBTs provide low power losses and are highly efficient in their operation. They can be used to control the brightness of the lamps to increase energy savings and provide optimal lighting. IGBTs are also ideal for energy-saving home appliances such as refrigerators and air conditioners. They provide excellent performance with high efficiency and in low-voltage applications.Finally, IGBTs are employed in a variety of automotive applications such as engine control, battery charging, starter motor control, and windscreen wiper control. They provide superior reliability and improved efficiency at low voltages.

Working Principle

The structure of APT75GN60LDQ3G is composed of an N-channel isolated-gate field-effect transistor (IGFET) and a p–n–p–n diode in the same package. This configuration is controlled by two gates, an insulated gate, and a base terminal. These gates control the flow of current through the device, allowing it to switch power quickly and efficiently. The working principle of the APT75GN60LDQ3G starts with the insulated-gate. This gate controls the voltage between the semiconductor substrate and the drain. When the gate voltage is low, the behavior of the device is similar to that of an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this state, the current flows unrestricted through the device in a process called drain saturation. At higher gate voltages, the conductivity between the source and the drain is greatly reduced and the current flow is cut off, a process called drain cut off. This allows for the efficient control of high-current switching applications.The second Gate, the base terminal, is used to provide current gain. When this gate is forward biased, current is injected into the p–n–p–n diode and the base-emitter junction is reverse biased. This puts the device into a conducting state and the current gain increases.

Conclusion

APT75GN60LDQ3G IGBTs are ideal for a variety of switching applications due to their high efficiency, low power losses, and reliable operation. They are most commonly used in motor control, lighting control, home appliances, and automotive applications. Their working principle starts with the insulated-gate and the base terminal, which together enable the efficient control of high-current switching applications.

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