APT75GP120B2G Discrete Semiconductor Products

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APT75GP120B2G Application Field and Working Principle

APT75GP120B2G is a field-stop insulated gate bipolar transistor (IGBT). It belongs to the same family of transistors as Metal-Oxide Semiconductor Field-effect Transistor (MOSFET) and Junction Field-effect Transistor (JFET). However, the IGBT boasts of better performance when it comes to voltage and switching applications. This article provides information about the application field and working principle of the APT75GP120B2G.

Application field of the APT75GP120B2G

The APT75GP120B2G is widely used in power converters, inverters, motor controllers, audio amplifiers, and power transmission applications. It is particularly accessible in low voltage applications. It is widely used in defrost mode switching and automotive control applications. The APT75GP120B2G features a turn-on-and-off speed that surpasses most IGBTs in the same category. This makes it ideal for use in most power electronics applications.

Working principle of the APT75GP120B2G

The working principle of the APT75GP120B2G follows the same principle as other IGBTs. An IGBT is a hybrid of a MOSFET and a BJT. The gate-emitter junction has negative resistance, and forms a base-emitter diode with the collector. When the gate voltage is increased, a voltage drop is primary across the collector-emitter junction until the IGBT reaches saturation. This can be repeatedly achieved, making the APT75GP120B2G suitable for repetitive switching.

The APT75GP120B2G’s base is connected to the main power source, and the collector is either a positive or negative power supply. When the base-emitter junction is forward biased, the collector current starts to flow. The voltage applied to the gate of the transistor controls the width of the operating region of the collector current. This, in turn, determines when the collector current will start to flow.

When the voltage applied to the gate is increased, the base current is increased, and the collector current will start to flow, leading to a rise of the voltage at the collector in a positive direction. This increases the forward biasing of the base-emitter junction and turns the transistor on. In order to turn the APT75GP120B2G off, the gate voltage is decreased, the base current is reduced, and the collector current will eventually stop.

The APT75GP120B2G is capable of handling high temperature applications due to its large thermal resistance. The fast switching capabilities also make it ideal for use in high frequency applications. It is also very efficient when it comes to controlling power and voltage across a system. This makes it ideal for use in a multitude of power electronics applications.

Conclusion

The APT75GP120B2G is a field-stop insulated gate bipolar transistor (IGBT) and is primarily used in low voltage applications. It is widely used in power converters, inverters, motor controllers, audio amplifiers, and power transmission applications due to its fast switching capabilities and high efficiency. The working principle of the APT75GP120B2G follows the same principle as other IGBTs, and its large thermal resistance also makes it suitable for use in high temperature applications.

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