APT70GR65B Discrete Semiconductor Products |
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Allicdata Part #: | APT70GR65B-ND |
Manufacturer Part#: |
APT70GR65B |
Price: | $ 5.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 650V 134A 595W TO-247 |
More Detail: | IGBT NPT 650V 134A 595W Through Hole TO-247 |
DataSheet: | APT70GR65B Datasheet/PDF |
Quantity: | 19 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.85730 |
10 +: | $ 4.37220 |
Power - Max: | 595W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 433V, 70A, 4.3 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/170ns |
Gate Charge: | 305nC |
Input Type: | Standard |
Switching Energy: | 1.51mJ (on), 1.46mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 70A |
Current - Collector Pulsed (Icm): | 260A |
Current - Collector (Ic) (Max): | 134A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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APT70GR65B is a single IGBT (Insulated Gate Bipolar Transistor) device that belongs to a family of insulated-gate power switching transistors. It is a monolithic structure that combines an N-channel MOSFET with a normally-off planar PN Tower Junction IGBT. Its output sstart to conduct current when the high voltage is applied to the Gate with MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) structure along with Boost Diode andCollector- Emitter voltage.
The main application of APT70GR65B is in the field of motor control. It is used in DC/AC inverters, switching power amplifiers, speed drives, soft starters and uninterruptible power supplies. It is also used in power supplies for motors, appliances, off-line AC lighting, traction and transportation systems, induction heating, magnetic resonance imaging and UPS.
The working principle of APT70GR65B is based on the principle of controlling current flow in the transistor. The device is made of a monolithic dielectric layer (silicon nitride) which is sandwiched between a P-type material and an N-type material. A voltage applied to the Gate allows the N-type material to change its resistance to current flows, and one of the result of this is the IGBTs conduction current.
When the positive voltage is applied to the Gate of APT70GR65B, the N-type material turns from ON to OFF state, allowing the current to flow from collector to emitter. This is known as the turn-on action. When a negative voltage is applied to the Gate, the N-type material again turns from ON to OFF state, blocking the current from collector to emitter. This is known as the turn-off action.
Apart from its application in motor control, the APT70GR65B device is also used in various industrial, automotive and consumer applications like induction heating, solar energy, telecom systems and household appliances. Its high current and voltage rating along with low on-resistance ratings make it a suitable device for high power applications.
In summary, APT70GR65B is a single IGBT device that is used in various applications such as motor control, telecom systems, home appliances, and induction heating. Its working principle is based on the controlling current flow with a monolithic dielectric layer of silicon nitride and by applying voltage to the Gate. Its high currents, voltage and low on-resistance ratings make it suitable for use in high power applications.
The specific data is subject to PDF, and the above content is for reference
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APT75GN120J | Microsemi Co... | 0.0 $ | 1000 | IGBT 1200V 124A 379W SOT2... |
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