APT70GR120L Allicdata Electronics

APT70GR120L Discrete Semiconductor Products

Allicdata Part #:

APT70GR120L-ND

Manufacturer Part#:

APT70GR120L

Price: $ 10.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 160A 961W TO264
More Detail: IGBT NPT 1200V 160A 961W Through Hole TO-264
DataSheet: APT70GR120L datasheetAPT70GR120L Datasheet/PDF
Quantity: 3
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 9.29250
10 +: $ 8.44767
25 +: $ 7.81403
100 +: $ 7.18046
250 +: $ 6.54690
500 +: $ 6.12452
Stock 3Can Ship Immediately
$ 10.23
Specifications
Power - Max: 961W
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 70A, 4.3 Ohm, 15V
Td (on/off) @ 25°C: 33ns/278ns
Gate Charge: 544nC
Input Type: Standard
Switching Energy: 3.82mJ (on), 2.58mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
Current - Collector Pulsed (Icm): 280A
Current - Collector (Ic) (Max): 160A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT70GR120L is a single insulated gate bipolar transistor (IGBT) that allows variable load resistance and speed control to be accomplished in the desired application. The device has an optimized cell design that enables high switching frequency, high efficiency and high reliability in the application. It is an ideal choice for power conversion, motor control and voltage regulation applications.

The APT70GR120L is designed with a bipolar collector-emitter voltage of 600V, a collector current of 70A, and an on-state collector-emitter saturation voltage of 1.7V. It also features low gate drive current resulting in low distortion and high inverter efficiency. Additionally, the input gate drive voltage is 5.5V, allowing for higher power conversion efficiency and higher switching speeds for improved motor control. The device also includes a wide temperature range, from -40°C to 150°C, for increased reliability in the application.

The working principle of the APT70GR120L is based on the switching behavior of bipolar transistors. The device has two primary components, an insulated gate and a collector. When the gate voltage is applied, it creates a depletion region on the collector, also known as the emitter side. This reduces the width of the collector-emitter region, which in turn allows more current to be transmitted. When the gate voltage voltage is removed, the current is cutoff and the transistor is said to be in a “OFF” state.

In a power conversion application, the APT70GR120L IGBT is typically used in a three-phase inverter circuit, in which the IGBT acts as a switch for the current flow through the inverter. The gate voltage is controlled by the inverter control to tune the switching frequency of the IGBT and hence, the switching speed. This allows for a wide range output power from the inverter, enabling constant power control or adjustable power control of the application. It is also suitable for use in motor control applications where frequency and speed control of the motor is necessary.

The APT70GR120L IGBT is an ideal choice for applications that require high switching frequency, high efficiency, and high reliability. It is suitable for power conversion, motor control and voltage regulation applications, due to its optimized cell design, low gate drive current, wide temperature range and 5.5V input gate drive voltage.

The specific data is subject to PDF, and the above content is for reference

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