Allicdata Part #: | APT7F100B-ND |
Manufacturer Part#: |
APT7F100B |
Price: | $ 3.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 7A TO-247 |
More Detail: | N-Channel 1000V 7A (Tc) 290W (Tc) Through Hole TO-... |
DataSheet: | APT7F100B Datasheet/PDF |
Quantity: | 1000 |
120 +: | $ 3.37827 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 290W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
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The APT7F100B is a depletion-mode N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is optimized for high-current, low-noise performance in its application field. It is an ideal choice for power conversion applications such as those used in audio and video circuitry, as well as for general purpose applications in consumer, industrial and automotive markets.
APT7F100B Features
The APT7F100B features a low-voltage gate threshold, high linearity, high input impedance, and low gate charge for improved efficiency and reliability. It has a maximum drain-source voltage of 100V, a maximum drain current of 10A and a total gate charge of 15nC, making it ideal for high-current applications. Additionally, the APT7F100B has ESD protection of up to 2000V and a junction temperature of 175 C.
APT7F100B Application Fields and Working Principle
The APT7F100B is an N-channel MOSFET which is most commonly used in power conversion applications. Its high current-handling capabilities, low gate charge and high linearity make it ideal for use in consumer, industrial and automotive applications. Additionally, its low-voltage gate threshold makes it suitable for low-noise applications such as in audio and video circuitry.
The working principle of a MOSFET is based on two fundamental properties. The first is the conductivity modulation which occurs when a voltage is applied to the gate (G) of the MOSFET, resulting in the conduction of current between the source (S) and the drain (D) terminals. The other is the pinch-off effect, which results in a decrease in the current flowing between the source and the drain when the applied gate-source voltage is increased beyond a certain threshold. The APT7F100B has a low-voltage gate threshold, so it is most suitable for use in low-noise applications.
The APT7F100B is optimized for use in power conversion applications, as its high-current, low-noise operation makes it an ideal choice for audio and video circuitry. It is also suitable for use in consumer, industrial and automotive markets due to its high linearity, high input impedance, low gate charge and ESD protection up to 2000V. Additionally, its junction temperature of 175 C makes it a reliable and durable choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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