APT75GN120B2G Discrete Semiconductor Products |
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Allicdata Part #: | APT75GN120B2G-ND |
Manufacturer Part#: |
APT75GN120B2G |
Price: | $ 10.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 200A 833W TMAX |
More Detail: | IGBT Trench Field Stop 1200V 200A 833W Through Hol... |
DataSheet: | APT75GN120B2G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
60 +: | $ 9.19961 |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
Package / Case: | TO-247-3 Variant |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 800V, 75A, 1 Ohm, 15V |
Td (on/off) @ 25°C: | 60ns/620ns |
Gate Charge: | 425nC |
Input Type: | Standard |
Switching Energy: | 8045µJ (on), 7640µJ (off) |
Power - Max: | 833W |
Series: | -- |
Current - Collector Pulsed (Icm): | 225A |
Current - Collector (Ic) (Max): | 200A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APT75GN120B2G is a new type of insulated gate bipolar transistor (IGBT) product, developed for high and medium voltage applications by Comanche electronic technology company. This is a single IGBT with integrated anti-parallel freewheeling diode, so the size and complexity are greatly reduced compared to the equivalent series of traditional IGBTs and anti-parallel diodes.
Compared to traditional MOSFET and bipolar transistors, IGBTs provide a higher voltage and current capacity and a higher switching frequency. The primary benefit of IGBTs is their hybrid characteristics, which combine the wide voltage range and low conduction loss of the MOSFET with the high frequency blocking capabilities of the bipolar junction transistor. The APT75GN120B2G is a good example of an IGBT; it is ideal for use in applications requiring high voltage and reliability in a compact package.
The APT75GN120B2G is suitable for use in variable frequency drives, motor control, power conversion, traction and lighting systems. Its unique features make it possible to use it in more demanding applications, such as in high-power converters and automotive inverters.
The APT75GN120B2G is a high voltage IGBT module with a maximum operating voltage of 1200V. It has low losses, fast switching speed and excellent short-circuit performance, with junction temperature of -55°C to 150°C. In addition, this IGBT has an innovative pin connection system which provides improved thermal contact, reducing the need for additional thermal management solutions.
The working principle of the APT75GN120B2G is based on the principle of electroluminescence. Using the gate voltage, electrons are accelerated through a gate dielectric material, releasing photons. The photons emitted during this reaction can activate the electrons in the adsorption layer, allowing the IGBT to be turned on at a much faster rate.
In addition to its high voltage and reliability, this type of IGBT also features excellent high-frequency performance and low EMI emissions, allowing it to be used in applications requiring high switching speed and low noise. So, the APT75GN120B2G is suitable for use in most power electronics applications.
Overall, the APT75GN120B2G is an ideal solution for medium voltage and high frequency applications, thanks to its robust construction, high current and low loss characteristics. This type of IGBT features high power levels and high switching frequencies, excellent thermal performance, low EMI emissions and loss, and a wide voltage range.
The specific data is subject to PDF, and the above content is for reference
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