Allicdata Part #: | APT77N60BC6-ND |
Manufacturer Part#: |
APT77N60BC6 |
Price: | $ 11.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 77A TO-247 |
More Detail: | N-Channel 600V 77A (Tc) 481W (Tc) Through Hole TO-... |
DataSheet: | APT77N60BC6 Datasheet/PDF |
Quantity: | 15 |
1 +: | $ 10.29420 |
30 +: | $ 8.65389 |
120 +: | $ 7.95228 |
Vgs(th) (Max) @ Id: | 3.6V @ 2.96mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 481W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 44.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 77A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT77N60BC6 is a high-efficiency, high-temperature MOSFET (metal oxide semiconductor field-effect transistor). It is typically used in applications such as switching, drivers and amplifiers. As one of the newest MOSFETs available, it offers excellent performance and is suitable for operating temperatures of up to 150°C.
A MOSFET is a three-terminal device composed of a gate, drain, and source. The gate controls the flow of current between the drain and source. It is used in many different types of circuits, from simple products to complex designs such as electronic switching, signal amplification, and signal processing. The MOSFET is the most widely used type of transistor in the world today.
In the APT77N60BC6, the source and drain are connected to a low-resistance wire. The source and drain also form two terminals (electrodes) that protrude from the surface of the MOSFET. The gate is formed by a third terminal (electrode) that is insulated from the highly conductive channel by a gate insulator. When a voltage is applied to the gate terminal, it forms a channel between the source and drain. This channel is known as a depletion region. When the channel is open, current can flow through it.
When the voltage at the gate changes, so does the width of the depletion region. This allows the MOSFET to control the flow of current between the source and drain. It can act as either a switch or an amplifier, depending on the applications. The APT77N60BC6 is particularly well-suited for use in high-temperature applications, due to its high-temperature design.
The APT77N60BC6 also offers excellent thermal and radiation performance. Its drain-source breakdown voltage (VDS) is 600V, which provides excellent protection against voltage spikes. The maximum drain current (ID) rating is 10A, with a maximum power dissipation (PD) of 140W. It has a high temperature rating of 175°C, and its on-resistance (RDS-on) is less than 25mΩ.
In addition to its high-efficiency performance, the APT77N60BC6 offers excellent reliability. It has a guaranteed lifetime of up to 10 years, with a maximum cycle life of up to 10 million cycles. It also has a high surge current rating of up to 125A. This makes it ideal for use in applications where high reliability and durability are required.
The APT77N60BC6 is an excellent choice for applications requiring high temperature operation, high efficiency, and high reliability. Its high-temperature design and high-efficiency performance make it ideal for a range of applications, from switching and drivers to amplifiers. Its high surge current rating and guaranteed lifetime make it an excellent choice for applications where high reliability is required.
The specific data is subject to PDF, and the above content is for reference
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