Allicdata Part #: | APT7F120B-ND |
Manufacturer Part#: |
APT7F120B |
Price: | $ 5.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 7A TO-247 |
More Detail: | N-Channel 1200V 7A (Tc) 335W (Tc) Through Hole TO-... |
DataSheet: | APT7F120B Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 5.21010 |
30 +: | $ 4.27203 |
120 +: | $ 3.85528 |
510 +: | $ 3.23012 |
1020 +: | $ 2.81334 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 335W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2565pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.9 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APT7F120B field-effect transistor is a well-known and popular device for many applications. It is used for both low-voltage and medium-voltage applications. This type of transistor has many variants, including the APT7F120B, which has become popular in recent years in many applications due to its excellent electrical performance and cost-effectiveness.
One of the most common applications of the APT7F120B is as a power device in medium- to high-voltage applications. It can be used to provide current switching and power control in circuits such as motor drives, inverters, and power supply controllers. It is a highly reliable device with low on-state resistance, and is well suited for power applications requiring high current action and a low voltage drop.
The working principle of the APT7F120B is quite simple. It is a field-effect transistor, meaning that it operates by modulating the ratio of the electric current flowing to and from the device. This is done using a gate voltage applied to the transistor, which is then used to control its current. By changing the gate voltage, the current flowing through the device can be adjusted, allowing for power control in circuits.
The field-effect transistor construction of the APT7F120B is well suited for high-frequency applications due to its capability for rapid switching. The wide frequency response range and low input capacitance also make it useful for several other applications, such as analog signal conditioning and RF amplifiers. Its low on-state resistance makes it suitable for applications where power is a major concern.
In addition to its electrical performance, the APT7F120B also offers reliable and cost-effective thermal performance. The thermal design of the device makes it capable of dissipating a large amount of power with minimal heat buildup. This allows for stable performance at higher temperatures and higher operating frequencies.
The APT7F120B field-effect transistor is an excellent choice for a wide variety of applications, including medium- to high-voltage power switching, analog signal conditioning, and RF amplifiers. It is a reliable device with low on-state resistance, wide frequency response range, and low input capacitance. It also provides reliable and cost-effective thermal performance, making it a great option for applications requiring high power levels and long device operation times.
The specific data is subject to PDF, and the above content is for reference
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