APT75GN120JDQ3

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	124A
Power - Max:	379W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 75A
Current - Collector Cutoff (Max):	200µA
Input Capacitance (Cies) @ Vce:	4.8nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	ISOTOP
Supplier Device Package:	ISOTOP®

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Introduction

IGBT, short for Insulated-Gate Bipolar Transistor, is a type of transistor which takes both the elements of a bipolar transistor and field effect transistor, combining their respective advantages and limitations. The IGBT Module is a combination of several of these IGBTs along with other components and function modules into a single package, forming a kind of complete IGBT power component. The APT75GN120JDQ3 is one of these IGBT Modules, offering improved performance in many applications.

Application Field

The APT75GN120JDQ3 IGBT Module is specifically designed for applications requiring high-power density and high-efficiency, such as industrial motor drives, uninterruptible power supply (UPS) systems, and renewable energy power conversion. With its high-current carrying capability, low on-state resistance and efficient heat dissipation, this IGBT Module is ideal for applications such as welding machines, DC motor drives, fan speed control and AC motor drives.

Working Principle

The APT75GN120JDQ3 IGBT Module operates on the principle of an Insulated Gate Bipolar Transistor (IGBT). Its operation is a combination of that of two transistors - a Bipolar Transistor (BJT) and a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). The BJT is used in the design to control the current flow across the collector to emitter junction, while the MOSFET is used to control the voltage applied to the base of the BJT. This provides the advantage that on-state losses due to the decreased on-state resistance of the IGBT Module.In addition to this, the IGBT Module is also built up with other components such as integrated gate drivers, electronic desaturation circuit, rectification bridge and filtering capacitor, making it a complete package for many power control applications. The APT75GN120JDQ3 IGBT Module is able to operate under wide input voltage range of 400V – 650V with its high voltage tolerance of up to 800V, making it suitable for applications requiring high current and high-power density.

Conclusion

The APT75GN120JDQ3 IGBT Module is most suitable for applications that require high-efficiency and high-power density, such as industrial motor drives and renewable energy power conversion. Its low on-state resistance, integrated gate drivers, electronic desaturation circuit and its high voltage tolerance of 800V make it one of the most powerful IGBT Modules available. With its many advantages, the APT75GN120JDQ3 IGBT Module can definitely increase overall system performance and reliability.

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