APT75GN60B2DQ3G Discrete Semiconductor Products |
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Allicdata Part #: | APT75GN60B2DQ3G-ND |
Manufacturer Part#: |
APT75GN60B2DQ3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 155A 536W TO264 |
More Detail: | IGBT 600V 155A 536W Through Hole |
DataSheet: | APT75GN60B2DQ3G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 536W |
Supplier Device Package: | -- |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Test Condition: | 400V, 75A, 1 Ohm, 15V |
Td (on/off) @ 25°C: | 47ns/385ns |
Gate Charge: | 485nC |
Input Type: | Standard |
Switching Energy: | 2500µJ (on), 2140µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.85V @ 15V, 75A |
Current - Collector Pulsed (Icm): | 225A |
Current - Collector (Ic) (Max): | 155A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT75GN60B2DQ3G is a medium voltage, fast switching, single IGBT module designed for use in high energy and current applications. The device is capable of providing the user with the highest performance levels, due to its high voltage rating, low ON-chip resistance, fast switching speed, and low gate charge. The module is made from a combination of high-grade silicon and other components, to create an exceptionally reliable and efficient IGBT device.
An IGBT, or Insulated Gate Bipolar Transistor, is a power processing device typically used within industrial and high-energy applications. It is a three-terminal device which combines the best features of both MOSFETs and bipolar transistors. Just like the MOSFET, the IGBT is voltage-controlled, but it can increase the current much like a bipolar transistor. This makes the IGBT an ideal choice for high-current, high-energy applications.
The APT75GN60B2DQ3G IGBT is designed to provide users with a robust and efficient solution for high voltage and power applications. This module is ideal for use in applications such as motor drives, welding, and solar inverters, as these require high power switching at high voltages. With its combined features, this IGBT allows the user to switch high currents with low losses, and with a reduced switching time.
The module is capable of providing a wide range of operation voltage from 110 to 600V, with a current rating of up to 75A. Its ON-state voltage drop is 0.178Ω and its typical switching frequencies are 5~200kHz. Furthermore, it incorporates a fast recovery diode or a 5x2.8mm power connector, depending on the model. These features make the module suitable for a variety of applications.
The module provides excellent power capabilities, efficiency, and cost reduction thanks to its integrated insulated gate structure and architectural design. Its insulated gate structure allows it to maintain its low on-state voltage even in the highest voltage operation, while its low gate charge enables its fast switching ability. Furthermore, the internal circuitry eliminates the need for any additional supporting components, simplifying the design and reducing the costs.
The APT75GN60B2DQ3G module has been designed to provide users with an efficient and reliable solution to their power application needs. It is capable of performing high-power switching with low losses and a low switch time at a range of voltages. Thanks to its integrated insulated gate structure and architectural design, the module is capable of providing the user with an efficient and cost-effective solution for their applications. From motor drives and welding to solar inverters, the APT75GN60B2DQ3G module is an ideal choice for the modern user.
The specific data is subject to PDF, and the above content is for reference
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