APT75GN60B2DQ3G Allicdata Electronics

APT75GN60B2DQ3G Discrete Semiconductor Products

Allicdata Part #:

APT75GN60B2DQ3G-ND

Manufacturer Part#:

APT75GN60B2DQ3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 155A 536W TO264
More Detail: IGBT 600V 155A 536W Through Hole
DataSheet: APT75GN60B2DQ3G datasheetAPT75GN60B2DQ3G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 536W
Supplier Device Package: --
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: --
Test Condition: 400V, 75A, 1 Ohm, 15V
Td (on/off) @ 25°C: 47ns/385ns
Gate Charge: 485nC
Input Type: Standard
Switching Energy: 2500µJ (on), 2140µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Current - Collector Pulsed (Icm): 225A
Current - Collector (Ic) (Max): 155A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT75GN60B2DQ3G is a medium voltage, fast switching, single IGBT module designed for use in high energy and current applications. The device is capable of providing the user with the highest performance levels, due to its high voltage rating, low ON-chip resistance, fast switching speed, and low gate charge. The module is made from a combination of high-grade silicon and other components, to create an exceptionally reliable and efficient IGBT device.

An IGBT, or Insulated Gate Bipolar Transistor, is a power processing device typically used within industrial and high-energy applications. It is a three-terminal device which combines the best features of both MOSFETs and bipolar transistors. Just like the MOSFET, the IGBT is voltage-controlled, but it can increase the current much like a bipolar transistor. This makes the IGBT an ideal choice for high-current, high-energy applications.

The APT75GN60B2DQ3G IGBT is designed to provide users with a robust and efficient solution for high voltage and power applications. This module is ideal for use in applications such as motor drives, welding, and solar inverters, as these require high power switching at high voltages. With its combined features, this IGBT allows the user to switch high currents with low losses, and with a reduced switching time.

The module is capable of providing a wide range of operation voltage from 110 to 600V, with a current rating of up to 75A. Its ON-state voltage drop is 0.178Ω and its typical switching frequencies are 5~200kHz. Furthermore, it incorporates a fast recovery diode or a 5x2.8mm power connector, depending on the model. These features make the module suitable for a variety of applications.

The module provides excellent power capabilities, efficiency, and cost reduction thanks to its integrated insulated gate structure and architectural design. Its insulated gate structure allows it to maintain its low on-state voltage even in the highest voltage operation, while its low gate charge enables its fast switching ability. Furthermore, the internal circuitry eliminates the need for any additional supporting components, simplifying the design and reducing the costs.

The APT75GN60B2DQ3G module has been designed to provide users with an efficient and reliable solution to their power application needs. It is capable of performing high-power switching with low losses and a low switch time at a range of voltages. Thanks to its integrated insulated gate structure and architectural design, the module is capable of providing the user with an efficient and cost-effective solution for their applications. From motor drives and welding to solar inverters, the APT75GN60B2DQ3G module is an ideal choice for the modern user.

The specific data is subject to PDF, and the above content is for reference

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