Allicdata Part #: | APT75GP120J-ND |
Manufacturer Part#: |
APT75GP120J |
Price: | $ 28.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 128A 543W SOT227 |
More Detail: | IGBT Module PT Single 1200V 128A 543W Chassis Moun... |
DataSheet: | APT75GP120J Datasheet/PDF |
Quantity: | 127 |
1 +: | $ 26.15130 |
10 +: | $ 24.45720 |
25 +: | $ 22.61950 |
100 +: | $ 21.20580 |
250 +: | $ 19.79210 |
Series: | POWER MOS 7® |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 128A |
Power - Max: | 543W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 7.04nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT modules have become widely used in modern electronic systems as switches as well as for industrial control and variable frequency drive applications. The APT75GP120J is a relatively new module in the field, offering a variety of features that make it a great choice for many applications. In this article, we will discuss the application field and working principle of the APT75GP120J.
The APT75GP120J is a 1200V, 75A IGBT module with integrated freewheeling diode. This module is mainly used as an inverter in power supply applications such as motors, uninterruptible power supplies, and solar inverters. It can be used as an active semiconductor switch in a variety of power circuits as well as industrial control applications.
The APT75GP120J IGBT module’s working principle is based on the principle of an insulated gate bipolar transistor (IGBT). An IGBT is a three-terminal device that combines the properties of a MOSFET and a BJT. It combines the power efficiency of the BJT with the speed of the MOSFET and therefore offers the best of both worlds. The APT75GP120J uses an insulated-gate to control the current flow of an NPN bipolar transistor as well as a free-wheeling diode for switching. This means that it can efficiently switch voltage frequencies of up to 3MHz and operate at a higher temperature range than many other IGBT modules.
The APT75GP120J IGBT module features a low switching time, high power density, and a high RDS(on) resistance. This makes the module suitable for applications in which high frequency, high energy or sensitive switching is required. Due to the advanced technology used in its construction, the APT75GP120J can operate at temperatures up to 150°C and still maintain its switching efficiency and power density. The IGBT module also has a built-in dynamic temperature protection feature, which ensures that the IGBT module is protected against thermal overloads.
The APT75GP120J IGBT module is suitable for a variety of industrial control and variable frequency drive applications. It can be used as an inverter, a high-side switch, or a low-side switch in motor control applications. It can also be used as an electronic switch for switching between AC and DC electric potentials.
In conclusion, the APT75GP120J is a great IGBT module for a variety of applications in the industrial control and variable frequency drive fields. It features a reliable working principle, advanced features, and superior power efficiency. Its low switching time, high power density, and RDS(on) resistance make it ideal for applications in which fast and efficient switching is important.
The specific data is subject to PDF, and the above content is for reference
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