Allicdata Part #: | APT7M120S-ND |
Manufacturer Part#: |
APT7M120S |
Price: | $ 5.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 8A D3PAK |
More Detail: | N-Channel 1200V 8A (Tc) 335W (Tc) Surface Mount D3... |
DataSheet: | APT7M120S Datasheet/PDF |
Quantity: | 1000 |
90 +: | $ 5.09019 |
Series: | POWER MOS 8™ |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2565pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 335W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D3Pak |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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APT7M120S is a MOSFET (metal oxide semiconductor field effect transistor) that is usually found in applications such as power supplies and motor controllers. It can be used in high power systems due to its high energy density. This type of MOSFET is designed as a single device with two independent source and drain terminals, as well as a gate terminal. The gate terminal is used to control the current that flows through the source and drain terminals.
APT7M120S can be used in medium- to low-frequency DC-DC converters, allow very low on resistance and providing good performance levels. The device can also be used in high power switching applications where the transformer is inserted in the resonant circuit allowing for a soft switching in order to minimize the switching losses. This characteristic offers the APT7M120S a significant advantage when it comes to power efficiency.
The APT7M120S MOSFET is composed of a single, insulated-gate-bipolar-transistor (IGBT) junction. The gate electrodes of the device are typically made from n-type and p-type layers of semiconductor material and an n-type layer of gate oxide between the gate electrodes. The gate oxide layer prevents charge carriers from traveling between the two gate layers and allows current in one direction only. When the gate is charged, electrons can pass through the gate oxide layer, thus allowing current flow across the source and drain terminals.
The source and drain terminals of the APT7M120S typically work on 120V AC circuits and can handle up to 7A current. The on-state resistance of the device is typically 0.7ohm. The device also has a low gate threshold voltage which allows low power consumption during switching processes.
The APT7M120S has a frequency range of 500kHz to 5MHz which makes it suitable for many switching applications. The device’s fast rise time and low on-state resistance allow for higher frequency switching, achieving power efficiencies of up to 95%. In addition, the device can work with both positive and negative gate signals providing variable signals for timing and analog circuits.
In summary, the APT7M120S is a single MOSFET device that is used for medium- to low-frequency DC-DC conversion and switching applications. The device has a low on-state resistance and low gate threshold voltage which makes it suitable for applications requiring high power efficiency. Its fast rise time and frequency range also makes it well suited for high frequency switching processes.
The specific data is subject to PDF, and the above content is for reference
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