APT75GN120LG Discrete Semiconductor Products |
|
Allicdata Part #: | APT75GN120LG-ND |
Manufacturer Part#: |
APT75GN120LG |
Price: | $ 12.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 200A 833W TO264 |
More Detail: | IGBT Trench Field Stop 1200V 200A 833W Through Hol... |
DataSheet: | APT75GN120LG Datasheet/PDF |
Quantity: | 534 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 10.94310 |
10 +: | $ 9.94581 |
25 +: | $ 9.19954 |
100 +: | $ 8.45369 |
250 +: | $ 7.70777 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 200A |
Current - Collector Pulsed (Icm): | 225A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
Power - Max: | 833W |
Switching Energy: | 8620µJ (on), 11400µJ (off) |
Input Type: | Standard |
Gate Charge: | 425nC |
Td (on/off) @ 25°C: | 60ns/620ns |
Test Condition: | 800V, 75A, 1 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 [L] |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT75GN120LG is a renowned insulated-gate bipolar transistor (IGBT) designed to be used in applications such as intelligent power modules (IPM) and high-power switching regulated power supplies. It is produced in a high-temperature, low-cost, well-researched process, making it a valuable option for many applications. Understanding the field of application and working principle of the APT75GN120LG IGBT is key to realizing the potential of this product in a variety of applications.
The APT75GN120LG IGBT is typically classified as belonging to the Single IGBTs category. The IGBT combines the benefits of both a bipolar junction transistor (BJT) and a MOSFET in one compact package. It consists of a three-terminal field-effect transistor that has a pair of p-type and n-type MOSFET transistors connected to the same source terminal. This source terminal also serves as the gate terminal of both the P-type and N-type MOSFET transistors. In operation, the APT75GN120LG IGBT shows excellent switching performance, with a low tail current and a very low on-state voltage drop.
As a general-purpose device, the APT75GN120LG IGBT is designed for a wide variety of applications. It can be used in consumer applications such as drives, home appliances, fans, and computer peripherals. It can also be used in industrial applications such as inverters, traction control, robotics, and electric vehicles. In industrial manufacturing, the device can be used for induction heating and welding, as well as for plasma cutters and printed circuit board assembly. This wide range of applications make the APT75GN120LG an ideal choice for designers looking for an efficient, robust, and reliable IGBT device.
The APT75GN120LG IGBT\'s working principle is based on an insulated gate-controlled electric field. This electric field is generated by applying a voltage to the gate terminal of the device. The electric field created by the gate voltage causes a flow of electron carriers between the source and the drain terminals of the device. In turn, this generates an electrical current between the source and drain regions of the device. The amount of current that flows through the device is determined by the electric field and by the resistance of the device between the source and drain.
Given its compact size and reliable performance, the APT75GN120LG IGBT is considered to be a premier choice for many applications. The device is also thermally robust and offers excellent thermal conduction with minimal copper losses. The device is thus ideal for applications that require high frequencies of switching as well as low switching losses. Furthermore, the APT75GN120LG IGBT has a wide range of operating temperature that further broadens its applications. Finally, the device has excellent short-circuit and overload protection, making it suitable for use in harsh environments.
In conclusion, the APT75GN120LG IGBT can be classified as belonging to the Single IGBTs category. Thanks to its unique combination of high switching speed, low on-state voltage drop, as well as its robust switching performance, the device is suitable for a variety of applications, including consumer, industrial, and automotive sectors. The working principle of the device involves the creation of an electric field between the source and drain terminals by applying a gate voltage. The APT75GN120LG IGBT is thermally robust and offers excellent thermal conduction with minimal copper losses. Finally, it has excellent short-circuit and overload protection, making it suitable for use in harsh environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APT70GR65B | Microsemi Co... | 5.34 $ | 19 | IGBT 650V 134A 595W TO-24... |
APT70GR65B2DU40 | Microsemi Co... | 5.75 $ | 1000 | INSULATED GATE BIPOLAR TR... |
APT70GR120B2 | Microsemi Co... | 8.67 $ | 1000 | IGBT 1200V 160A 961W TO24... |
APT75GN120B2G | Microsemi Co... | 10.12 $ | 1000 | IGBT 1200V 200A 833W TMAX... |
APT75GN60LDQ3G | Microsemi Co... | 8.71 $ | 1024 | IGBT 600V 155A 536W TO264... |
APT75GN120LG | Microsemi Co... | 12.04 $ | 534 | IGBT 1200V 200A 833W TO26... |
APT75GP120B2G | Microsemi Co... | 19.0 $ | 1000 | IGBT 1200V 100A 1042W TMA... |
APT75GN60B2DQ3G | Microsemi Co... | 0.0 $ | 1000 | IGBT 600V 155A 536W TO264... |
APT75GN60BG | Microsemi Co... | -- | 6 | IGBT 600V 155A 536W TO247... |
APT70GR120L | Microsemi Co... | 10.23 $ | 3 | IGBT 1200V 160A 961W TO26... |
APT7F120B | Microsemi Co... | 5.73 $ | 1000 | MOSFET N-CH 1200V 7A TO-2... |
APT77N60BC6 | Microsemi Co... | 11.32 $ | 15 | MOSFET N-CH 600V 77A TO-2... |
APT75M50L | Microsemi Co... | 12.73 $ | 18 | MOSFET N-CH 500V 75A TO-2... |
APT75DQ60BG | Microsemi Co... | -- | 809 | DIODE GEN PURP 600V 75A T... |
APT75M50B2 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 75A T-MA... |
APT7F80K | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 800V 7A TO-22... |
APT70SM70B | Microsemi Co... | 0.0 $ | 1000 | POWER MOSFET - SICN-Chann... |
APT70SM70J | Microsemi Co... | 0.0 $ | 1000 | POWER MOSFET - SICN-Chann... |
APT70SM70S | Microsemi Co... | -- | 1000 | POWER MOSFET - SICN-Chann... |
APT7M120B | Microsemi Co... | -- | 1000 | MOSFET N-CH 1200V 8A TO24... |
APT75DQ120BG | Microsemi Co... | -- | 525 | DIODE GEN PURP 1.2KV 75A ... |
APT75GP120JDQ3 | Microsemi Co... | 30.93 $ | 757 | IGBT 1200V 128A 543W SOT2... |
APT75GP120J | Microsemi Co... | 28.76 $ | 127 | IGBT 1200V 128A 543W SOT2... |
APT75GN120JDQ3 | Microsemi Co... | 22.97 $ | 32 | IGBT 1200V 124A 379W SOT2... |
APT75GT120JRDQ3 | Microsemi Co... | 27.45 $ | 8 | IGBT 1200V 97A 480W SOT22... |
APT75GT120JU2 | Microsemi Co... | 22.02 $ | 26 | IGBT 1200V 100A 416W SOT2... |
APT70GR120JD60 | Microsemi Co... | 26.99 $ | 15 | IGBT 1200V 112A 543W SOT2... |
APT70GR65B2SCD30 | Microsemi Co... | 0.0 $ | 1000 | INSULATED GATE BIPOLAR TR... |
APT75GT120JU3 | Microsemi Co... | 17.39 $ | 1000 | POWER MOD IGBT 1200V 100A... |
APT75DQ100BG | Microsemi Co... | 2.98 $ | 1000 | DIODE GEN PURP 1KV 75A TO... |
APT77N60SC6 | Microsemi Co... | 10.03 $ | 1000 | MOSFET N-CH 600V 77A D3PA... |
APT75F50L | Microsemi Co... | 11.58 $ | 1000 | MOSFET N-CH 500V 75A TO-2... |
APT75F50B2 | Microsemi Co... | -- | 1000 | MOSFET N-CH 500V 75A TO-2... |
APT77N60JC3 | Microsemi Co... | 25.69 $ | 208 | MOSFET N-CH 600V 77A SOT-... |
APT75GN120JDQ3G | Microsemi Co... | 0.0 $ | 1000 | IGBT 1200V 124A 379W SOT2... |
APT75GN120J | Microsemi Co... | 0.0 $ | 1000 | IGBT 1200V 124A 379W SOT2... |
APT70GR120J | Microsemi Co... | 0.0 $ | 1000 | IGBT 1200V 112A 543W SOT2... |
APT75DL120HJ | Microsemi Co... | 14.92 $ | 1000 | MOD DIODE 1200V SOT-227Br... |
APT75DF170HJ | Microsemi Co... | 18.85 $ | 1000 | MOD DIODE 1700V SOT-227Br... |
APT75DL60HJ | Microsemi Co... | 0.0 $ | 1000 | MOD DIODE 600V SOT-227Bri... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT