APT75GT120JRDQ3

Series:	Thunderbolt IGBT®
Part Status:	Active
IGBT Type:	NPT
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	97A
Power - Max:	480W
Vce(on) (Max) @ Vge, Ic:	3.7V @ 15V, 75A
Current - Collector Cutoff (Max):	200µA
Input Capacitance (Cies) @ Vce:	5.1nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	ISOTOP®

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Transistors - IGBTs - Modules

IGBT (Insulated Gate Bipolar Transistor) module APT75GT120JRDQ3 is a 120A/600V module designed to deliver high performance and reliability in challenging power applications. The device utilizes a superior 3-level IGBT gate drive circuit to create a fast switching device suitable for a wide range of industrial applications.

Applications Area

APT75GT120JRDQ3 module is suitable for many industrial applications, such as motor drives, industries automation, lighting, renewable energy power conversion, as well as other high power applications. As it has high surge current capability, it can also be used in vehicles, electric scooters and power tools applications.

Device Characteristics of APT75GT120JRDQ3

The APT75GT120JRDQ3 device has a number of features that make it suitable for demanding industrial applications. Firstly, the device operates at a maximum power dissipation of 1000W, allowing it to handle up to 600V of supply voltage. Secondly, the device has a very low on-state voltage drop and requires low gate drive to operate. This allows it to achieve high efficiency ratings. Additionally, the device has a reverse-conducting configuration, which ensures high efficiency in power conversion. Finally, the device has a fast switching speed, making it ideal for applications that require high switching speeds.

Working Principle of APT75GT120JRDQ3

The working principle of APT75GT120JRDQ3 module leverages IGBT technology. In simple terms, this type of device consists of two components: an insulated gate and an underlying bipolar transistor. When a positive gate voltage is applied to the device, the insulated gate acts as a switch, controlling current flow in the collector-emitter section of the device. This control of current flow is the fundamental principle behind IGBT devices.When a gate voltage is applied to the APT75GT120JRDQ3 device, the insulated gate creates a conductive channel between its collector and emitter sections. The magnitude of the current flow is directly proportional to the gate voltage applied. This property of the IGBT devices allows them to be used in power conversion applications, providing efficient operation with minimal impact on the load.

Conclusion

The APT75GT120JRDQ3 module is an excellent choice for power applications requiring high efficiency and reliability. The device’s unique 3-level IGBT gate drive circuit allows for fast switching, while its low voltage drop and reverse-conducting configuration ensure high efficiency in power conversion. Additionally, the device’s high surge current capability makes it suitable for vehicles, electric scooters, and power tools applications.

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