AS6C8016A-55ZINTR Allicdata Electronics
Allicdata Part #:

AS6C8016A-55ZINTR-ND

Manufacturer Part#:

AS6C8016A-55ZINTR

Price: $ 2.75
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 8Mb (512K x 16) Para...
DataSheet: AS6C8016A-55ZINTR datasheetAS6C8016A-55ZINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 2.50047
Stock 1000Can Ship Immediately
$ 2.75
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The AS6C8016A-55ZINTR is a crucial component in modern-day memory chips. It is a specialized 8-bit static random access memory (SRAM) integrated circuit (IC). This memory unit is one of the popular choices for embedded product designers, who need a reliable and cost-efficient solution for high-capacity storage. As its name suggests, the AS6C8016A-55ZINTR is a specialized IC specifically designed to support the zintr memory access protocol. This article covers the application field, working principle and other features of this integrated circuit.

Its main application field is temporary and short-term data storage. This type of memory chip is particularly useful in embedded systems such as consumer electronics, medical equipment, and automotive systems, where space is an important factor. The AS6C8016A-55ZINTR is also well adapted for volatile memory applications. Since this memory is static, it does not need to be refreshed and can hold the data for a much longer time than dynamic memories.

The working principle of this IC is based on a series of capacitors that are connected to transistors. When the memory cell is accessed, a small voltage will be applied to form a data bit by altering the remaining charges in the capacitor. It is important to note that the AS6C8016A-55ZINTR is a highly efficient static random access memory, which means that all the data can be accessed in a single memory array cycle.

The AS6C8016A-55ZINTR is equipped with a wide range of additional features that are beneficial in embedded applications. When operated in an extension mode, this IC can provide access to up to 8MB of memory. It also has an onboard write-protect feature, which allows for efficient memory protection during write operations. Furthermore, the memory array features sleep mode, which helps to reduce the overall power consumption.

Apart from its industry-leading features, the AS6C8016A-55ZINTR also provides outstanding levels of stability and reliability. This IC is designed to withstand a wide temperature range, from -55 to 125 degrees Celsius, allowing for operation in extreme environmental conditions. Furthermore, each device is individually tested for quality and reliability, ensuring performance that meets the highest standards.

In conclusion, the AS6C8016A-55ZINTR is an industry-leading 8-bit static random access memory (SRAM) integrated circuit. It is an ideal choice for embedded applications, where high-capacity storage is needed in a small form factor. Additionally, this memory has a wide range of features, such as onboard write-protect, sleep mode and extended access speed, making it an excellent choice for short-term data storage. Furthermore, its built-in reliability and stability makes it ideal for use in a wide range of environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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