AS6C4008A-55STINTR

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The AS6C4008A-55STINTR from Alliance Memory is a low-power and high-performance 8-megabit CMOS Static Random Access Memory (SRAM). The memory is organized as 1,048,576 words by 8-bits and can be used in a variety of applications that require high-speed and low power memory. The memory is available in both a low-voltage (1.8V) and a standard (3.3V) version.

The AS6C4008A-55STINTR is ideal for embedded applications such as those found in consumer electronics, automotive, industrial, medical and other electronic systems where SRAM memory is used. It supports a wide range of operating temperatures and is capable of providing reliable operation in harsh industrial and automotive environments. The high-performance AS6C4008A-55STINTR memory is well suited for use in applications where high-speed access and large storage capacity are required.

Application Field of AS6C4008A-55STINTR

The AS6C4008A-55STINTR is widely used in the consumer electronics market, including consumer video and digital television, digital set top boxes, navigation systems, digital voice recorders, digital cameras and digital camcorders, MP3 players, and media players. It can also be used in automotive and industrial applications, including engine control systems, harsh industrial environments, and power supply systems. It is ideal for embedded systems, such as those found in cellular phones, portable media players and PDAs.

The AS6C4008A-55STINTR is also suitable for applications requiring a large memory capacity and low power consumption. It offers quick access times and low-power operation, making it a good choice for applications requiring quick response times with little or no latency. It can be used in power-sensitive or battery-powered applications, such as wireless LANs and RFID systems, and can also be used in ultra-portable devices.

Working Principle of AS6C4008A-55STINTR

The AS6C4008A-55STINTR uses static random access memory (SRAM). SRAM is different from the more common dynamic random access memory (DRAM) in that it does not require periodic refresh cycles to maintain the contents. This makes SRAM a more reliable and faster memory than DRAM. SRAM utilizes multiple transistors and capacitors in order to achieve its high speed.

The AS6C4008A-55STINTR is organized as 1,048,576 words by 8-bits and has an access time of 55ns. The memory requires supply voltage of 1.8V or 3.3V, depending on the version, and operates over a temperature range of -40 to 85 degrees Celsius, making it suitable for a wide range of applications. The memory is available in both through-hole and surface-mounted packages.

The AS6C4008A-55STINTR utilizes a single address bus and four data buses for read and write operations. Each read/write cycle requires a minimum four cycles for completion. The memory reads and writes data through use of a latch that is located between the data and address buses. When a high logic level is applied to the load pin, data is written to the memory. When the same pin is set to a low logic level, data is read from the memory.

The AS6C4008A-55STINTR is designed to be fast and low-power consuming, and it is capable of providing reliable operation in harsh industrial and automotive environments. It is ideal for applications requiring high-speed access, large memory capacity, and low power consumption. The memory is well suited for use in embedded systems, such as those found in consumer electronics, automotive, industrial, medical and other electronic systems.

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