AS6C4008-55TINTR Allicdata Electronics
Allicdata Part #:

AS6C4008-55TINTR-ND

Manufacturer Part#:

AS6C4008-55TINTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 4M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: AS6C4008-55TINTR datasheetAS6C4008-55TINTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I
Description

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AS6C4008-55TINTR is a type of memory integrated circuit (IC) that can be used for data access and storage. It is an 8-bit static random access memory (SRAM) device. The device is designed for a wide variety of embedded systems applications and has a wide operating temperature range (-40°C to +85°C).

The AS6C4008-55TINTR has an important role in memory management and is widely used in various devices, such as digital cameras, mobile phones, computers, digital flat panel displays and embedded system devices. The device can store up to 256KB of data and provides fast and reliable data access.

The AS6C4008-55TINTR operates on 3.3V power supply and is organized as 4 banks of 512Kx8 bits. The device can access four 4-bytes of data simultaneously. The device supports page write operation, which enables fast and simultaneous writes of up to 4 data bytes. The device provides fast data access rates of 20MHz at the maximum clock frequency.

The device supports various write operations, such as single byte write, random word write, write word by word and write combining. It also supports both byte (low byte/high byte) and word mode operations. The AS6C4008-55TINTR also has two power-saving modes, standby and sleep mode, for when it is not actively accessing data.

The AS6C4008-55TINTR has two input control pins, WE and OE, that are used to control access to the memory. The OE (Output Enable) pin determines whether a read operation is taken or not. When OE is high, all bits on the outputs are high-impedance. When OE is low, the read operation is enabled and data is read out by the data pins (DQ[7:0]).

The WE (Write Enable) pin determines whether a write operation is taken or not. When WE is low, the write operation is enabled, and all bits on the inputs are synchronized and written into the memory array. When WE is high, all write operations are disabled, and all bits on the inputs are ignored.

The AS6C4008-55TINTR also has a built-in power-on-reset circuit, which ensures proper initialization of the device. The device also has an on-chip error correction circuit, which can detect and correct single-bit errors due to noise on the bus or other sources.

The AS6C4008-55TINTR is a low-power device, making it suitable for battery-powered embedded applications. The device also has a high speed operation, making it suitable for applications that require fast data access. Its wide operating temperature range makes it suitable for industrial applications. The device is available in a wide range of packages, making it suitable for a range of application demands.

The specific data is subject to PDF, and the above content is for reference

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