AS6C1616-55TINTR Allicdata Electronics
Allicdata Part #:

AS6C1616-55TINTR-ND

Manufacturer Part#:

AS6C1616-55TINTR

Price: $ 5.26
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 48TSOP I
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: AS6C1616-55TINTR datasheetAS6C1616-55TINTR Datasheet/PDF
Quantity: 1000
1500 +: $ 4.79108
Stock 1000Can Ship Immediately
$ 5.26
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS6C1616-55TINTR is a type of memory that is available for use in a variety of different applications. It is commonly used in embedded and industrial automation systems, as well as in other applications that need a reliable source of data storage. This type of memory is designed to be reliable, and provide high performance data storage.

The AS6C1616-55TINTR is a 256K x 16-bit static RAM that is capable of operating at speeds up to 20 MHz. It has an asynchronous read/write cycle time of 20 ns and an asynchronous stand-by power consumption of 110 mW. This memory is also capable of supporting a variety of system architectures, including 8-bit and 16-bit systems. It is also available in both low and high temperature ranges, allowing it to be used in a variety of different environments.

The AS6C1616-55TINTR offers a number of different features that are designed to make it a reliable and efficient source of data storage. It has an asynchronous burst read/write cycle that can read or write multiple words in a single cycle, improving system performance. It also provides data signal thresholds for both rising and falling edges, improving the accuracy of data transfers. The memory also features an on-chip error correction logic that can detect and correct errors that occur during data transfers.

The AS6C1616-55TINTR also has an array of internal registers that are designed to allow the memory to be custom configured for specific applications. These registers can be used to configure the memory to work with a variety of peripherals and memory controllers. This means that the AS6C1616-55TINTR can be used in a variety of different embedded and industrial applications.

In addition to its data storage capabilities, the AS6C1616-55TINTR also provides several additional features. It includes a write protect signal, as well as a write inability signal, allowing the memory to be protected from overwriting. The memory also includes a self-test function, which can be used to check the integrity of the data stored in the memory. It also includes an on-chip watchdog timer that can be used to detect and recover from any errors or issues that may occur during data transfers.

The AS6C1616-55TINTR is a reliable and efficient source of data storage, making it ideal for a variety of industrial applications. It is designed to be reliable and provide high performance data storage, and its array of internal registers allows it to be custom configured for specific applications. Its features and capabilities make it a great choice for embedded and industrial applications, making it a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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