AS6C4008-55SINTR Allicdata Electronics
Allicdata Part #:

AS6C4008-55SINTR-ND

Manufacturer Part#:

AS6C4008-55SINTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 4M PARALLEL 32SOP
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: AS6C4008-55SINTR datasheetAS6C4008-55SINTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOP
Description

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AS6C4008-55SINTR is a very common asynchronous static random access memory (SRAM). It is widely used in a variety of applications and is available in different packages. SRAMs are used to store data in a non-volatile way, meaning that data is retained when the device is powered off. AS6C4008-55SINTRs provide high-speed data transfers, with access times of typically 55ns, making them well-suited to applications such as multimedia, gaming or data acquisition.

At the core of an AS6C4008-55SINTR is a memory array comprising of memory cells arranged in an 8x8 matrix. Each memory cell consists of four transistors and two capacitors, connected in a configuration known as a six transistor (6T) SRAM cell. During a read or write operation, data is transferred between the cell and an external memory bus. The transistors in the 6T cell control the transfer of data and act as switches. When the cell is read, the capacitors hold the data, which is then amplified and sent over the external bus. When the cell is written to, the external data is converted back to a voltage level and stored in the capacitors.

AS6C4008-55SINTRs provide many advantages over other types of memory such as DRAMs, including speed, low power consumption, and high density. The low-voltage operation of AS6C4008-55SINTRs allows them to be used in battery-powered applications, as well as automotive and industrial system designs. The fast access time makes it suitable for a variety of real-time applications, such as image and audio processing, voice recognition systems, etc.

The AS6C4008-55SINTR can be used in a wide range of applications including automotive safety and infotainment, communications and industrial controllers, embedded control systems, robotics, medical devices, and consumer products. The memory can be used in several configurations, including 1KB, 2KB, 4KB, 8KB, 16KB, 32KB and 64KB packages. This flexibility enables designers to tailor the memory configuration to fit their particular application.

In addition to the high speed and low power operation, the AS6C4008-55SINTR also offers high reliability and superior data retention.Power cycling doesn\'t affect the memory and it has a low noise level and excellent thermal protection. The memory can operate from a wide temperature range of -40°C to +125°C, making it suitable for harsh environmental conditions.

In conclusion, the AS6C4008-55SINTR is a versatile and reliable SRAM, designed for use in a wide range of applications from consumer products to automotive and industrial systems. With its fast access time and low power requirement, it is an ideal choice for embedded applications where real-time operation is required.

The specific data is subject to PDF, and the above content is for reference

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