AS6C1616-70BINTR Allicdata Electronics
Allicdata Part #:

AS6C1616-70BINTR-ND

Manufacturer Part#:

AS6C1616-70BINTR

Price: $ 5.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 48TFBGA
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: AS6C1616-70BINTR datasheetAS6C1616-70BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 4.59283
Stock 1000Can Ship Immediately
$ 5.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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The AS6C1616-70BINTR is a dynamic random access memory (DRAM) chip designed for use in computers, mobile devices, and other digital devices. It has a capacity of 16K x 16 bits, with a minimum access time of 45ns (nanoseconds). The AS6C1616-70BINTR is a green product and complies with RoHS (Restriction of Hazardous Substances) regulations.

The AS6C1616-70BINTR is a single-transistor DRAM with a four-fold reduction in the access cycle time over standard DRAM chips. This DRAM chip utilizes advanced CMOS technology with low power consumption, making it an ideal choice for applications that require a low standby current and high performance.

The memory architecture of the AS6C1616-70BINTR is based on a 2-bank 4-bit cell. This chip utilizes a 4K x 4 bit array architecture that enables the device to offer low latency in both read and write operations. The device also features an advanced "burst read" feature that allows for multiple consecutive reads with a single address.

The AS6C1616-70BINTR is designed to provide high performance with a wide range of operating frequencies. The device can operate from both a regulated 3.3V or 5V supply and is also available in a low-voltage version to accommodate low-power systems. It has low caland calland latencies, which make it well-suited for high-speed applications such as graphics cards, 3D gaming, and digital video.

The working principle behind the AS6C1616-70BINTR is based on the "burst read" feature. This feature is enabled by the use of a fast low-power CMOS circuitry, which allows the chip to rapidly access data stored in the on-chip addressable memory array. The device also supports multiple concurrent read operations, allowing the chip to complete multiple operations in a single read cycle.

The AS6C1616-70BINTR is suitable for a wide range of applications, including digital audio, digital video, embedded control systems, handheld consumer devices, 3D graphics, gaming, and automotive systems. Its low power consumption and fast access time make it ideal for both low-power and high-performance systems.

In conclusion, the AS6C1616-70BINTR is a 16K x 16 bit DRAM chip designed for high-performance applications. Its advanced CMOS architecture enables the device to achieve a low latency in both read and write operations, while its low power consumption makes it an ideal choice for both low-power and high-performance systems.

The specific data is subject to PDF, and the above content is for reference

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