AS6C1616-70BIN

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AS6C1616-70BIN is a non-volatile memory that can offer higher densities than ERA-SRAMs with performance digital signals. It is a 16Mb (2048k-word) CMOS static random-access memory (SRAM) that has a 70ns operation time. The memory has a low standby current of 2.5mA, suitable for battery operated applications. It also has an operating temperature range of -55°C to +125°C, this will improve its memory performance, making it suitable for use in extreme conditions.

There are two types of AS6C1616-70BIN products, 5V and 3.3V. Both types incorporate an SRAM array, high speed read circuits and built-in column redundancy. The 5V version also includes a built-in noise suppressor for added noise tolerance. The array is organized as 2048k x 8-bits and organized as 8 pages of 256k x 8-bits are selectable. The SRAM array of the AS6C1616-70BIN has an organized structure in which a row address and column address are selected simultaneously. The row address and column address are input to an address buffer and then to an address multiplexer. The address multiplexer selects the appropriate row and column address from the address buffer. This process is known as row decoder and column decoder.

Once the data is read in from the SRAM array, it is amplified by the input buffer amplifiers and then is fed to the output buffer amplifiers where it is read out as a binary signal. The AS6C1616-70BIN provides two latching signals, one for the address bus and one for the data bus. The address bus latching signal is asserted after the row and column address is valid and before the data is valid. The data bus latching signal is asserted after the data is valid and before the write command is performed.

The AS6C1616-70BIN is often used in applications that require large memory capacity, such as video games, medical equipments, industrial controllers, and hard disk controllers. It offers a higher capacity than other standard SRAM products, while consuming relatively little power and offers good operation speed. Furthermore, the AS6C1616-70BIN is a non-volatile memory, meaning that it can retain its data even when power is removed. This feature makes the AS6C1616-70BIN ideal for applications that require data retention even after power is removed.

The AS6C1616-70BIN is an ideal choice for applications needing larger memory capacity and faster operating speeds. It has been designed to provide excellent performance in a wide range of demanding applications. With advanced features such as on-chip noise suppressor and wide supply voltage range, the AS6C1616-70BIN is a great choice for memory applications needing low power consumption and high performance.

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