AS6C2008-55BINTR Allicdata Electronics
Allicdata Part #:

AS6C2008-55BINTR-ND

Manufacturer Part#:

AS6C2008-55BINTR

Price: $ 1.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 36TFBGA
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: AS6C2008-55BINTR datasheetAS6C2008-55BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 1.35859
Stock 1000Can Ship Immediately
$ 1.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)
Description

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The AS6C2008-55BINTR is a type of memory, which are primarily used in microcontroller designs and highly integrated embedded systems. It has been designed to provide reliable and long-term storage for microcontrollers with minimal power consumption.

The AS6C2008-55BINTR is a Static Random Access Memory (SRAM). It has the advantage of being incredibly fast and can store data without the need for any electrical connections. This type of memory is ideal for applications that use frequently accessed information as it can be accessed quickly and efficiently. The memory has a latency time of 3.2 nanoseconds, ensuring that data is retrieved quickly.

The memory is organized into four data cells, which are arranged in a row and column structure. Each cell consists of two independently operated read/write locations that store the data. These locations are randomly accessed and operate in parallel, allowing the memory to operate at a faster rate. The memory utilizes an advanced addressing scheme which enables data to be organized in any order, thus allowing the most efficient organization of data to be chosen.

The memory is clocked with a two-phase clock signal. It uses two clocks, a forward clock and a reverse clock, that are provided by the internal voltage regulator. The reverse clock is used to write data onto the memory while the forward clock is used to read data from the memory. The clock signal is synchronized with the data transfer, thus ensuring that data is written and read correctly.

The AS6C2008-55BINTR is suitable for use in a variety of embedded applications. It is used in microcontroller designs for applications such as medical equipment, automotive systems, industrial control systems and gaming systems. The memory also finds application in embedded systems that require reliable storage of large volumes of data such as image and document files. The memory can also be used for storage of software and firmware for embedded systems.

The AS6C2008-55BINTR has the advantage of low power consumption and a low operating voltage of 1.65V. This makes it particularly suitable for use in portable devices that need to conserve battery power. The memory also features ECC (Error Correction Code) which ensures data integrity and accuracy.

The AS6C2008-55BINTR is a fast and reliable memory solution and is suitable for a wide range of embedded applications. It is highly integrated and efficient, making it an excellent choice for microcontroller designs and embedded systems. With its low power consumption, fast access times and ECC support, the AS6C2008-55BINTR provides an excellent solution for reliable storage of data in embedded systems.

The specific data is subject to PDF, and the above content is for reference

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