AS6C1616-55BIN Allicdata Electronics
Allicdata Part #:

1450-1131-ND

Manufacturer Part#:

AS6C1616-55BIN

Price: $ 5.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 48TFBGA
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: AS6C1616-55BIN datasheetAS6C1616-55BIN Datasheet/PDF
Quantity: 1000
480 +: $ 4.96257
960 +: $ 4.87889
Stock 1000Can Ship Immediately
$ 5.46
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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The AS6C1616-55BIN is a memory IC capable of storing a large amount of data. It is most popularly applied to embedded systems, such as those found in automotive, IoT, and other industries. The AS6C1616-55BIN is equipped with the ability to maximize data storage through the use of its 16kbits. It can also be used to store code and data in both its SRAM and EEPROM. The AS6C1616-55BIN also has a low-power consumption design, as well as an extremely high-speed operation. This makes it an ideal choice for applications in which both speed and power efficiency are important factors.

The AS6C1616-55BIN is a static RAM memory IC that utilizes a single charge pump voltage regulator used to provide the power supply to it. It is typically used to store large amounts of data, such as variables, process parameters, and instruction codes. As a result, it can be used in a variety of applications, including embedded devices or applications where data storage needs to be maximized. Furthermore, the AS6C1616-55BIN has a fast data access time of 55ns, making it well suited for high-speed applications.

The AS6C1616-55BIN is a 16Kbit SRAM memory that is configured to store 8-bits per word. This means that it can store up to 8-bits of data in each of its 16,384 memory cells. It also operates using a single +5V power supply and can be used in a variety of applications due to its low power consumption and wide environmental temperature range. Additionally, the AS6C1616-55BIN is resistant to vibration and shock, making it highly reliable.

When programming the AS6C1616-55BIN with data, one must first select the memory array. Data can then be written to the appropriate address on the memory array. The address line is used to select the address of the desired memory cell, while the data line allows the data to be written. The data is organized into 8-bit words and is written to the address designated when the memory is erased or programmed. The data written to the memory is held in the SRAM cells and can be read back at any time using the designated address.

In summary, the AS6C1616-55BIN is a 16Kbit memory IC that is designed for applications requiring the storage of large amounts of data, such as those found in automotive, IoT, and other embedded systems. It is configured with a single +5V power supply, a fast 55ns data access time and offer a wide environmental temperature range for optimal performance. Additionally, its low power consumption and high shock/vibration resistance make it a reliable choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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