BF904,235

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BF904,235 is a type of Field Effect Transistor (FET) used in radio frequency (RF) applications. It is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which works by varying an electric charge with a metal plate or gate electrode located between a source and drain section. As the metal plate modulates the electric charge, it creates an electrical control of the on/off states of the device. This device is ideal for RF applications as it can switch high power and frequencies with less noise than a conventional transistor.

In terms of its construction, the BF904,235 consists of a source and drain terminal, a gate terminal and a metal layer deposited on the bulk field oxide formed in the silicon substrate. The characteristics of the device depend on the thickness of the oxide layer, gate voltage and the gate threshold voltage. The oxide layer is the control element and allows for the control of the on/off states of the device. Additionally, the metal source and drain contacts are used to control the flow of electrical current.

The working principle of the BF904,235 is that when the gate voltage applied to the terminal is over the gate threshold voltage, the device will be in its off-state, meaning it will not conduct current. However, when the gate voltage is lowered to below the gate threshold voltage, the device will switch into the on-state and will start to conduct current between the source and the drain.

The main application of the BF904,235 FET is in RF circuits, such as Amplifiers, Antennas, and Oscillators. Due to its high switching speed, low noise performance, gain-bandwidth product and high breakdown voltage, it can also be used in many other applications, such as LED Driver circuits, audio amplifiers, and pulse generators. In all of these applications, the device offers excellent noise reduction, fast switching and improved efficiency.

In summary, the BF904,235 MOSFET is a type of N-channel enhancement mode FET used in RF circuits. It works by varying an electric charge with a metal plate or gate electrode located between a source and drain section. Furthermore, it offers excellent noise reduction, fast switching and improved efficiency. All this has made it one of the most popular MOSFETs used in RF, audio and pulse generator applications.

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