BF904AR,215

Introduction

BF904AR,215 is a Transistor Field Effect Transistor (FET) based on Metal Oxide Semiconductor (MOS) technology. It is part of a family of RF transistors that have been designed for use in high and low noise amplifier (LNA) applications.

Application Field

The BF904AR,215 is suitable for applications where a low noise, low power consumption and low cost transistor is desired. Typical applications for the BF904AR,215 include radios, mobile phone receivers and other RF communication devices. Due to its small size, the transistor is ideal for use in miniaturized integrated circuit designs.

Features

• Wide operating frequency range from 1.7GHz to 2.3GHz
• Low noise figure of 0.5dB at 2GHz
• High gain of 18.5dB at 2GHz
• High input and output impedance
• Low power consumption of 5mW
• Robust and reliable over temperature range of -40°C to +125°C

Working Principle

The BF904AR,215 operates in the same way as other FETs; an oscillating electric field at radio frequencies is created from the input signal applied to the drain-gate region. This electric field forces electrons and holes of the device to move forwards and backwards causing a change in the electrical characteristics of the device.

The drain current decreases as the gate voltage increases, thus the transistor can be used to amplify a signal. The gate-source voltage (VGS) of the BF904AR,215 can range from 0V to 6V and the drain-source voltage (VDS) from 0V to 1V.

The maximum operating temperature of the device is 125°C, and the maximum drain current should not exceed 120mA. In addition, the maximum power dissipation should not exceed 5W.

Conclusion

In conclusion, the BF904AR,215 Transistor Field Effect Transistor (FET) is an ideal device for high and low noise amplifier (LNA) applications, as it offers a wide operating frequency range, low noise figure, high gain and low power consumption. It also provides high input and output impedance and is robust and reliable over a temperature range of -40°C to +125°C.