BF908R,215

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BF908R,215 is a discrete silicon Field Effect Transistor (FET) component specifically designed to be used in radio frequency (RF) applications. This component utilizes a metal-oxide semiconductor (MOS) transistor technology, with the main component being a P-channel type, which makes it most suitable for use in low noise and wideband amplification applications.

The physical structure of the component is a three-legged component, with two of the legs connected to two semiconductor layers, consisting of a doped substrate and an oxide layer. The third leg represents the gate and is connected to a metal layer and a dielectric material. When a positive voltage is applied across the gate, this creates an electric field and a current is thus generated. This current is known as the gate bias current, and serves to control the conductivity of the source-drain path. The gate bias is also responsible for controlling the threshold voltage and the peak current.

Through the use of a P-channel MOSFET technology, the component has a highly linear operation, making it suitable for use in RF applications. Additionally, the component has an extremely low noise figure and a high current capacity, making it suitable for use in high frequency applications such as mobile phone transmitters and receivers. The component also has a relatively high gate capacitance, making it suitable for use in high frequency applications.

The component has a breakdown voltage of 70 volts and a maximum power rating of 200 mW. The component is also capable of operating over a wide temperature range of -55°C to +150°C. In terms of physical size, the component is quite small, measuring just 8.5 mm x 5.2 mm x 2.9 mm.

The BF908R,215 is designed to be used in a variety of RF circuits, especially those in which high frequencies are required. It is particularly well suited for applications in which low noise, wideband amplification is required, such as cellular phone RF amplifiers. It can also be used in low frequency circuits, such as FM receivers.

In conclusion, the BF908R,215 is a great component to consider when designing RF circuits. Its low noise figure, wideband capability, and high current capacity make it well suited for both low and high frequency applications. Additionally, its small size makes it easy to integrate into existing circuits.

The specific data is subject to PDF, and the above content is for reference