BF909R,215 Allicdata Electronics
Allicdata Part #:

568-6177-2-ND

Manufacturer Part#:

BF909R,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 7V 40MA SOT143
More Detail: RF Mosfet N-Channel Dual Gate 5V 15mA 800MHz SOT...
DataSheet: BF909R,215 datasheetBF909R,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 800MHz
Gain: --
Voltage - Test: 5V
Current Rating: 40mA
Noise Figure: 2dB
Current - Test: 15mA
Power - Output: --
Voltage - Rated: 7V
Package / Case: SOT-143R
Supplier Device Package: SOT-143R
Base Part Number: BF909
Description

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A metal oxide semiconductor field-effect transistor (MOSFET) is a type of field-effect transistor (FET) that uses metal oxide semiconductor as the gate material for its construction. The BF909R215 is an RF MOSFET transistor designed to operate in UHF radiofrequency bands. This type of transistor is widely used in radio frequency (RF) applications due to its high output voltage gain, low distortion, and low noise levels.

The BF909R215 is made from a leaded metal oxysilicate semiconductor material with an unmatched gate structure. This allows for a much higher voltage handling capability than other similar FETs. The die material is SiGa 8-5P5, which has a high thermal resistance, a low threshold voltage, and excellent field-effect performance. Additionally, the device has an integrated limiter and varactor substrate, which help to maintain high linearity and performance in the range of 215 MHz.

The basic principle of the operation of the BF909R215 is the same as all other FETs, in that it relies on a gate voltage to control the amount of electrons that can be transferred between the source and drain. When a gate voltage is applied, the transistor is turned on and current flows between the two elements. As the gate voltage increases, the amount of electrons that can be transferred between the source and drain increases.

The BF909R215 can be used in a wide variety of RF applications such as radio receivers, transmitting amplifiers, and broadband amplifiers. The device is capable of operating in the frequency range from 80 MHz to 215 MHz and can handle up to 25 watts of output power. It also has a low input impedance (50 ohms) and high operating temperature range (-40 to +85 degrees Celsius).

The device has a low noise figure of 2.5 dB at 890 MHz and 1.5 dB at 215 MHz, and boasts high gain figures of 25 dB at 890 MHz, and 23 dB at 215 MHz. It has a maximum junction temperature of 150 degrees Celsius, making it suitable for use in high-temperature environments. Additionally, the BF909R215 has very low drain-source voltage drop, making it ideal for use in low-voltage applications.

The BF909R215 features a wide range of features that make it an ideal choice for a variety of RF applications, from low-power systems to high-frequency ones. It offers excellent linearity, high gain, and low noise figures, and has a high thermal resistance and a wide range of operating temperatures. This makes it a great choice for a wide range of RF applications.

The specific data is subject to PDF, and the above content is for reference

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