BF908,215

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The BF908,215 is a high voltage field-effect transistor (FET) manufactured by NXP Semiconductors.

FETs, or field-effect transistors, are active devices which use electric fields instead of current to control the flow of electrical current. FETs are divided into two main types: metal oxide semiconductor field-effect transistors (MOSFETs) and junction field-effect transistors (JFETs). The BF908,215 is a MOSFET.

RF (radio frequency) FETs are used in a variety of applications, including wireless communications, audio, radar, television antenna amplifiers, and shortwave radio applications. The BF908,215 is a high voltage FET designed for various RF applications, such as amplifiers and absorbers for radio frequency (RF) amplifiers, satellite receivers, cellular/wireless base station modules, and wireless local area network (WLAN) systems.

The BF908,215 is a N-Channel enhancement mode FET with a drain-source breakdown voltage of 150 volts and a maximum drain-source on state resistance of 0.9 ohms. Its maximum current rating is 30mA. Its gate-source threshold voltage is 4 volts, and its gate capacitance is around 5pF. It also has a high gain at low frequencies and an excellent isolation performance.

FETs work by using an electric field to control the flow of current through a channel on the semiconductor material. When a voltage is applied to the gate, it creates an electric field which in turn modulates the conductivity of the material inside the channel, allowing current to passes through the channel. This is the general working principle of all FETs, including the BF908,215.

The BF908,215 is a versatile RF FET that can be used for a variety of RF applications, such as amplifiers, absorbers, and antenna amplifiers. Its high voltage rating, low on state resistance, and excellent isolation performance makes it suitable for high power applications. It is also a reliable and robust FET, making it a popular choice for RF engineers.

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