BF904WR,115

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RF transistors are special purpose transistors designed to operate at radio and microwave frequencies. They are used for amplifying and switching signals in these frequencies. The BF904WR,115 is an example of an RF transistor belonging to the metal-oxide-semiconductor field-effect transistor (MOSFET) category. The following sections will explore this RF transistor in greater detail, including its application field and working principle.

Application Field of BF904WR,115

The BF904WR,115 is used in a variety of applications such as power amplifiers, preamplifiers, transmitters, and low-noise amplifiers. It is well suited for applications in the following frequency ranges: up to 900 MHz in broadcast bands, up to 600 MHz in cellular radio bands, up to 6 GHz in ISM radio bands, and up to 10 GHz in Satcom bands. The transistor also has applications in radio test equipment. It is suitable for industry automation, automotive and medical equipment, and consumer electronics.

Working Principle of BF904WR,115

The BF904WR,115 is a depletion-mode RF MOSFET that was developed for operation at medium power levels. It is formed from two N type layers placed upon a P type substrate. This produces a PN junction between the two N type layers which forms the channels for conducting current. The voltage applied across the gate and source determines the rate at which current can flow through the device. A negative voltage applied to the gate will open up the channels and allow current to flow, while a positive voltage applied to the gate will close the channels and stop the current.

The BF904WR,115 has modest power gain performance of 13 dB at 900 MHz, The transistor has an excellent drain efficiency of more than 50% at 900 MHz. The circuit stability is excellent and there is minimal risk of thermal instability when operated at temperatures up to 150°C. The transistor has a maximum DC voltage of 175V and a maximum DC current of 10A. This makes it suitable for a range of applications that require medium power levels.

Conclusion

The BF904WR,115 RF transistor is a MOSFET-type transistor that is used for amplifying and switching signals in radio and microwave frequencies. This transistor has applications in a range of applications including power amplifiers, preamplifiers, transmitters, low-noise amplifiers, and radio test equipment. The power gain performance of this transistor is modest but the drain efficiency is excellent. This transistor also has excellent circuit stability and is able to operate up to temperatures of 150°C. This makes it suitable for use in a wide variety of applications that require the transmission and amplification of medium power signals.

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