BF904R,215 Allicdata Electronics
Allicdata Part #:

568-6172-2-ND

Manufacturer Part#:

BF904R,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 7V 30MA SOT143
More Detail: RF Mosfet N-Channel Dual Gate 5V 10mA 200MHz SOT...
DataSheet: BF904R,215 datasheetBF904R,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 200MHz
Gain: --
Voltage - Test: 5V
Current Rating: 30mA
Noise Figure: 1dB
Current - Test: 10mA
Power - Output: --
Voltage - Rated: 7V
Package / Case: SOT-143R
Supplier Device Package: SOT-143R
Base Part Number: BF904
Description

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The BF904R,215 is a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for radio frequency (RF) amplification. It falls under the category of Field-Effect Transistors (FETs) which are designed for use in radio frequency circuits. These FETs are efficient and reliable components that can be used in a variety of applications.

The BF904R,215 is a low noise device which can be used in a variety of applications. It is typically used in amplifier and oscillator circuits, as well as switching applications. It also has very high-frequency gain capability which makes it ideal for use in RF communications such as cellular base stations and wireless local area networks (WLANs).

The physical size of the component is small, with a total length of 14mm and a width of 1.8mm. This allows it to be used in tight spaces and limits the physical area needed for the component in a circuit. The component is made from silicon and is flat-packaged to allow for easy handling and mounting to the application.

The BF904R,215 MOSFET operates on a basic working principle. When the gate terminal is forward-biased (positive) with respect to the drain terminal, the channel region between the drain and the source terminals is opened and a steady current flows through the device. The Forward Transfer Admittance, or Yfs, of the component typically ranges from 250-350mS. This means that the component has a low source resistance, allowing for higher current drive with low levels of distortion.

The component can also be easily integrated into high-frequency circuits as it has relatively low gate and drain capacitances. This helps to reduce parasitic capacitive coupling, which is especially important for frequencies above 1GHz. Additionally, the component has a very low noise figure of 1.1dB at 2.4GHz, making it well-suited for Microwave Applications.

The BF904R,215 MOSFET is an ideal component for a number of RF applications. Some of the more common applications include Cellular Base Stations, WLANs, Amplifiers, Modulators, and Oscillators. It is a versatile and efficient component that is easy to integrate into circuits. Due to its low noise performance, small size and high frequency gain, it is an excellent choice for a wide variety of RF applications.

The specific data is subject to PDF, and the above content is for reference

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