Allicdata Part #: | BF908R,235-ND |
Manufacturer Part#: |
BF908R,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET DUAL GATE 12V 40MA SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 8V 15mA 200MHz SOT... |
DataSheet: | BF908R,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | -- |
Voltage - Test: | 8V |
Current Rating: | 40mA |
Noise Figure: | 0.6dB |
Current - Test: | 15mA |
Power - Output: | -- |
Voltage - Rated: | 12V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF908 |
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The BF908R,235 is an advanced high current FET (field-effect transistor) designed for use in a wide range of applications. It is an RF MOSFET (metal-oxide-semiconductor field-effect transistor) designed for wireless applications, and is suitable for use in high power switching, high power amplifiers and advanced RF multi-input amplifiers.
The BF908R,235 is a high current FET whose operation is based on the principle of a transistor. Transistors use a small current to control the flow of a much larger current. A FET consists of a channel between two terminals, which is called the gate. The channel can either be open or closed depending on the voltage applied to the gate. When the gate voltage is increased, the channel opens and current can flow between the two other terminals called the source and the drain.
The BF908R,235 is an advanced high current FET due to its high current carrying capacity. It has a high gain and low power consumption and is capable of operation at frequencies up to 200 MHz with very stable performance. The gate is controlled by an external DC voltage. When the gate voltage is increased, the FET is switched on and current can flow between the two other terminals called the source and the drain.
This FET is ideal for applications where high current is required such as high power switching, power amplifiers and RF multi-input amplifiers. It can be used in high-frequency power amplifiers for wireless communication systems, and for switching applications up to 200 MHz. It is also suitable for high power amplifiers for audio applications. The FET requires a gate voltage of 5-30V for its operation.
In conclusion, the BF908R,235 is an advanced high current FET designed for a variety of applications. It is a MOSFET RF transistor that is capable of operation at frequencies up to 200 MHz and is suitable for use in high power switching, high power amplifiers and advanced RF multi-input amplifiers. It has a high gain and low power consumption and requires a gate voltage of 5-30V for its operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BF908,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 40MA SOT1... |
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BF909,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 40MA SOT14... |
BF909,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 40MA SOT14... |
BF908WR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 12V ... |
BF904AR,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT14... |
BF904A,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT14... |
BF908R,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET DUAL GATE 12V 40MA... |
BF904AWR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT14... |
BF909AWR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 40MA SOT14... |
BF904WR,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT34... |
BF908R,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET DUAL GATE 12V 40MA... |
BF909R,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 40MA SOT14... |
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