BF904AWR,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel Dual Gate
Frequency:	200MHz
Gain:	--
Voltage - Test:	5V
Current Rating:	30mA
Noise Figure:	1dB
Current - Test:	10mA
Power - Output:	--
Voltage - Rated:	7V
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	CMPAK-4
Base Part Number:	BF904

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Introduction

BF904AWR,115 is a type of field-effect transistors (FETs) widely used for radio frequency (RF) applications.This type of FET is also a Metal Oxide Semiconductor FET (MOSFET) which makes use of an insulated gate to control the current flow.As with all other FETs, this type also consists of a channel, between the source and drain, through which the current flows.

Types

BF904AWR,115 FETs come in various shapes, sizes, and power ratings.The most common type is a N-channel MOSFET, which uses an N-type channel for conducting electrons.These devices are also available in P-channel type, where the channel is made of P-type material.

Features

BF904AWR,115 FETs offer several features which make them popular for RF applications.They are usually manufactured as surface mount devices, making them ideal for circuits which require high speed and less space.In addition, these devices also come with a reliable source of RF power, which is ideal for radio designs.

Applications

BF904AWR,115 FETs are used in a variety of radio frequency applications such as those requiring low power transmitters, receivers and other types of circuits.These FETs are also used in switching and power control applications, due to their ability to operate at high frequency and low gate drive requirements.

Working Principle

The working principle of BF904AWR,115 FETs is very similar to other types of FETs.When an electric field is applied to the insulated gate of the device, the resulting electrostatic force will cause the current to flow between the source and drain.The amount of current flow is controlled by the voltage applied to the gate, allowing current regulation through the device.

Advantages

BF904AWR,115 FETs offer several advantages over other types of FETs.One of the main advantages is their low gate drive requirements, which means less energy is required to open the gate and direct a current through the device.They also have a lower internal capacitance and can operate at higher frequencies.Finally, these FETs offer a high resistance to thermal shock and overvoltage, meaning they can withstand higher temperatures and voltages.

Conclusion

BF904AWR,115 FETs are a type of field-effect transistors (FETs) and are especially suitable for radio frequency (RF) applications.They come in N-channel and P-channel types, offer a reliable source of RF power and are ideal for circuits which require high speed and less space.The working principle of these FETs is similar to other types and they offer a number of advantages, including low gate drive requirements, lower internal capacitance, the ability to operate at higher frequencies, and a high resistance to thermal shock and overvoltage.

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