BF909AWR,115

The BF909AWR 115 is a radio frequency (RF) laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) designed for broadband, high-power Wireless Local Loop (WLL) applications such as cellular base stations. It is part of an emerging class of high-power RF transistors known as high-power laterally diffused metal oxide semiconductor field effect transistors (HP-LDMOSTFETs).

The BF909AWR 115 is designed to deliver outstanding RF performance with exceptional power gain, low noise figure and excellent linearity. It is optimized to cover all three cell bands (850 MHz, 900 MHz and 1800 MHz). Moreover, it is a complete solution, as it includes additional features such as a built-in internal power limiter and temperature sensor.

The device is offered in a unique package allowing it to be used in both the baseband sub-system and in the radio frequency sub-system. The device features an internal power limiter, allowing it to limit the power to a predefined level, thereby protecting the device from high RF power levels and ensuring that overall system performance remains at a consistent level.

In addition, the internal temperature sensor is also integrated with the device, providing a usable thermal monitor output. The thermal monitor output requires only a small current, making it suitable for use with many kinds of microcontrollers.

The BF909AWR 115 has a low noise figure of 1.7 dB and a high output power of 14 Watts (1 dB compression point). It also offers high linearity and the ability to handle up to +/-20V reverse bias voltage. All these features make the BF909AWR 115 an ideal solution for digital Limited Multiple Access (TDMA) advanced wireless systems.

The GFET-on-substrate technology used in the device provides a very low thermal resistance, allowing maximal thermal dissipation and good heat transfer. This is necessary in RF applications, where heat dissipation is a major concern. Also, the high-resistance gate oxides used in the device provide excellent RF performance. All these features make the BF909AWR 115 a reliable solution for wireless applications.

In summary, the BF909AWR 115 is a highly advanced RF field effect transistor that offers a unique combination of features. It is optimized for use in WLL systems and has been designed for applications requiring high linearity, low noise, and high power output. It is an ideal solution for digital Limited Multiple Access (TDMA) advanced wireless systems.