| Allicdata Part #: | 568-1969-2-ND |
| Manufacturer Part#: |
BF908WR,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET NCH DUAL GATE 12V CMPAK-4 |
| More Detail: | RF Mosfet N-Channel Dual Gate 8V 15mA 200MHz CMP... |
| DataSheet: |  BF908WR,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | N-Channel Dual Gate |
| Frequency: | 200MHz |
| Gain: | -- |
| Voltage - Test: | 8V |
| Current Rating: | 40mA |
| Noise Figure: | 0.6dB |
| Current - Test: | 15mA |
| Power - Output: | -- |
| Voltage - Rated: | 12V |
| Package / Case: | SC-82A, SOT-343 |
| Supplier Device Package: | CMPAK-4 |
| Base Part Number: | BF908 |
Description
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Introduction
The BF908WR,115 is an RF field effect transistor (FET) that combines the low noise performance and the wide frequency response of a bipolar transconductance amplifier (BTA) with the wide bandwidth of a Mosfet. It is designed for linearity, high speed, and high efficiency in Wideband applications. This article will provide an overview of the application fields and working principle of the BF908WR,115.Application Fields
The BF908WR,115 is designed for high linearity and low noise in a wide range of applications. It is suitable for use in mobile communications, including base station receivers, and mobile handset receivers. This device is also suitable for use in military and aerospace applications, as well as in digital signal processing. The broad range of applications is due to its high power handling capability, combined with its low noise figure.In addition, this transistor can be used in radio frequency amplifiers, power measurement and control systems, high frequency signal amplification and signal processing, and signal boosting. It is also suitable for use in the field radiotelegraphy, digital communication, radar, spread spectrum and digital TV transmission.Working Principle
The BF908WR,115 is a field effect transistor that works on the principle of transistor action. A voltage applied to a gate terminal causes a change in an electric field, which in turn affects the current flowing between source and drain terminals. The output current is regulated by the input voltage, which influences the electric field between the source and drain terminals.The BF908WR,115 is an N-Channel Mosfet that combines the low noise and large frequency response of a BTA bipolar with the wide bandwidth of a Mosfet. The superior linearity and noise figure is achieved by connecting two small transistors in series with one large transistor. The small transistors act as current source loads, while the large transistor acts as a buffer to produce a predictable and consistent output.Conclusion
In conclusion, the BF908WR,115 is an RF field effect transistor with a wide range of applications. It is suitable for high linearity, low noise and high power handling. The working principle is based on transistor action, wherein a voltage applied to a gate terminal affects the output current between source and drain terminals. This device can be used for radio frequency amplifiers, power measurement and control systems, high frequency signal amplification and signal processing, and other applications.The specific data is subject to PDF, and the above content is for reference
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| BF908WR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 12V ... |
| BF904AR,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT14... |
| BF904A,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT14... |
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| BF909AWR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 40MA SOT14... |
| BF904WR,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 7V 30MA SOT34... |
| BF908R,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET DUAL GATE 12V 40MA... |
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